BCP6925TA Discrete Semiconductor Products

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BCP6925TA is a high-performance NPN Si-epitaxial transistor manufactured by STMicroelectronics which is used for a wide range of applications. It is equipped with a low-voltage base and an epitaxial N-type base on the collector, which make it suitable for numerous applications including high-voltage switching, power switching, current gain, and amplifier stages.

BCP6925TA has an operating voltage range of 0.05 V to 30 V across its collector and emitter terminals, with a maximum forward bias of 40 V. The collector-emitter saturation voltage is also very low, at 0.3 V. It has a current gain of 150 up to 630, varying by the collector current, making it an ideal choice for medium- to high-power applications. The maximum allowable power dissipation is 1.8 W, with a continuous collector current of 0.3 A.

BCP6925TA contains a single NPN transistor with a three-terminal collector, base, and emitter. As a result, it is classified as single bipolar junction transistor (BJT) according to the categorization of circuit elements. BJT transistors are divided into two categories: n-channel and p-channel. BCP6925TA is an n-channel transistor meaning that when an electric current moves from base to collector, it carries electrons. This low-noise transistor can be used in a variety of applications due to its high current gain and low forward bias.

The working principle of BCP6925TA can be broken down into two stages. The first is the input stage, where the base-emitter voltage VBE is negative, allowing the electrons to flow from emitter to the base. This creates a control current, or emitter current, which is used to control the current in the collector. The second stage is the output stage, where the collector current and base current are equal, allowing the voltage across the collector-emitter to decrease and the transistor to switch off. The current gain of BCP6925TA is achieved in this output stage.

BCP6925TA can be used in many applications such as power switches, amplifier stages, high-voltage switching, current gain, and power-source switching. It is widely used in microprocessors and other circuits where a low-voltage base is required and the use of high voltages require a low forward bias. It is also used in photoelectric sensors and Li-ion battery protection circuits due to its low base current and wide current gain range.

In conclusion, BCP6925TA is an NPN Si-epitaxial transistor manufactured by STMicroelectronics which is used in a variety of applications. It has an operating voltage range of 0.05 V to 30 V, a current gain of 150 up to 630 and a maximum allowable power dissipation of 1.8 W, making it ideal for medium- and high-power applications. The working principle of BCP6925TA consists of two stages and is classified as a single BJT transistor. As a result, it can be an ideal choice for various applications including Li-ion battery protection circuits, high-voltage switching, photoelectric sensors, amplifier stages, power-source switching, and current gain.

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