Allicdata Part #: | BCP6925TC-ND |
Manufacturer Part#: |
BCP6925TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 20V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 1A 100MHz 2W Surf... |
DataSheet: | BCP6925TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 500mA, 1V |
Power - Max: | 2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BCP69 |
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The BCP6925TC is a single Bipolar Junction Transistor (BJT) that progressively supports higher voltage ratings, meaning it is designed with an increasing breakdown voltage ratings. This transistor is ideal for use in high power applications with its low output capacitance. It is packaged in a small SOT-143 modular package, making it easy to integrate into small designs and offers clear advantages over conventional SOT-223 packaged transistors.
The BCP6925TC has a series of unique feature characteristics which provide it with its high breakdown voltage. It includes an integrated dielectric layer between the base and the emitter, preventing short-circuiting and additional field current concentration. The emitter - base junction is connected to the collector, creating a power rating of up to 40W. The specially designed dielectric layer also provides the transistor with good electrical insulation, meaning it can handle up to -40V reverse bias as opposed to standard transistors.
The device is well suited when used in applications with its wide range of typical h parameters. This includes a low-noise transconductor gain of up to 1.6mA/V, a high current gain of up to 100V/V, and a maximum collector current of -200mA. Other potential applications include wide-band amplifiers, voltage regulators, and high-frequency switch circuits. In addition, it can also be used in general switching circuits.
The device features a fast switching speed of 10µs which ensures the low power dissipation in the transistor. It is constructed in a planar process where a monolithically integrated collector, base and emitter layers are grown over a silicon wafer. These layers form an insulated gate field-effect transistor through which current flows from the collector to the emitter. This ensures that there is maximum switch action with minimal signal distortion and power dissipation for a given electrical setting.
The BCP6925TC also features an internal reverse bias voltage protection circuit which prevents destructive dielectric breakdown which could cause damage to the device. It also provides a regulated current gain, meaning that the current gain will remain stable regardless of the amount of temperature change. This transistor is also RoHS compliant, minimizing any potential environmental hazards.
The BCP6925TC offers many advantages over other single bipolar transistors. It offers stability, higher voltage rating and electrical insulation. It also has low noise transconductor gain and high current gains. It also provides protection against destructive dielectric breakdown as well as an efficient switching speed. Its RoHS compliance also helps to reduce environmental impact.
The specific data is subject to PDF, and the above content is for reference
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