Allicdata Part #: | BCR48PNH6727-ND |
Manufacturer Part#: |
BCR 48PN H6727 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN/PNP PREBIAS SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | BCR 48PN H6727 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR48PN |
Supplier Device Package: | PG-SOT363-6 |
Package / Case: | 6-VSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 100MHz, 200MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms, 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 70mA, 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BCR 48PN H6727 is a pre-biased quadruple array of low-noise NPN bipolar transistors. The device is designed for use in a wide range of applications, from general purpose analog amplifier stages to RF preamplifiers where performance is a must. BCR 48PN H6727 is available in TO-252 package and offers high speed, minimal drift, and a low noise figure for superior performance.
The device is designed to minimize the effects of thermal and bias instability, with a switching speed of up to 3 GHz and a typical power dissipation of 420 mW. The pre-biased NPN array consists of 4 transistors with identical characteristics that are matched to provide consistent performance.
The BCR 48PN H6727 is suitable for a number of different applications. It is an ideal solution for Receiver and IF stages in audio-frequency applications. In addition, its low-noise performance makes it well suited for AGC and AF pre-amplifier stages. The high speed of the array also makes it an excellent choice for pulse shaping circuits.
The BCR 48PN H6727 offers excellent overload rejection and capability with a wide operating range. It also includes a number of protection features such as precision-matched transistors and over-voltage protection. The BCR 48PN H6727 also has high output current and can drive low-impedance loads.
The BCR 48PN H6727 is designed to operate with a single-ended supply voltage of 4.0 to 7.5 V with a maximum power dissipation of 1.14 A. The total operating current is up to 0.9 A with a collector-emitter saturation of 0.4V. The device has a thermal resistance of 3°C/W, making it ideal for operation in high-temperature environments.
The working principle of the BCR 48PN H6727 is based on its pre-biased NPN quadruple array. The four transistors are connected in a common-emitter configuration. The outputs of the transistors are connected to the collectors and emitters of each other. The signal which is applied to one of the input terminals is then amplified by the other transistors and appears at the output.
The BCR 48PN H6727 is an excellent choice for a wide range of applications that require high speeds and low noise figures. It is highly reliable, has excellent overload rejection, and includes protection features such as precision-matched transistors and over-voltage protection. This device is an ideal solution for use in Radio Frequency (RF) pre-amplifiers, Receiver and IF stages in audio-frequency applications, AGC and AF pre-amplifier stages, and pulse shaping circuits.
The specific data is subject to PDF, and the above content is for reference
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