BCW30,235 Allicdata Electronics
Allicdata Part #:

BCW30,235-ND

Manufacturer Part#:

BCW30,235

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 32V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor PNP 32V 100mA 100MHz 250m...
DataSheet: BCW30,235 datasheetBCW30,235 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02276
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BCW30
Description

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BCW30,235 transistors belong to the category of single bipolar junction transistors (BJT). This type of transistor, also referred to as a BJT, is an active semiconductor device, composed of three layers of semiconductor material, such as silicon, and between these layers, or regions called the base, collector and emitter. The BCW30,235 type is a PNP construction with the following properties - collector voltage rating of 30V, collector current of 1.2A and hFE at minimum of 235.

The primary purpose of the BCW30,235 is to amplify signals, for example using biasing which can provide the device with a controlled current gain. Through the base-emitter junction, the device can control the current that flows to the collector, thus providing an amplification effect. This type of device is primarily used in applications such as switching and signal amplification.

Given that this type of transistor has a low power consumption and high current gain, it is particularly attractive for a wide variety of applications. The BCW30,235 type is therefore suitable for general purpose amplification, as well as being used in electronic circuits for power management (e.g. switching, low frequency switching, etc.) and analog signal conditioning (e.g. amplifying audio signals). In light of the device\'s low power consumption and wide voltage range, the transistor can also be used for battery operated portable electronics, such as digital music players, PDAs and mobile phones.

Using biasing of the BCW30,235 device allows the collector current to be regulated, and thus also the power output. This biasing can be achieved by means of external resistors or with the use of a reference voltage provided by a circuit component, such as a diode. With regards to signal amplifying applications, single transistors and complementary transistor pairs (with an NPN and PNP transistor connected in opposite polarity) can be used.

The operating principle of the BCW30,235 is relatively straightforward. Once the proper biasing has been applied, electrical input signals are applied at the emitter and base terminals, whilst the collector terminal will collect the amplified output signals. This principle is used for both signal amplifying applications, as well as for switching applications. In the case of signal amplifying, the signals at the base terminal are amplified at the collector terminal and can be used for other purposes. In the case of switching applications, signals at the collector terminal can cause the device to switch on and off, thus providing a power control effect.

The BCW30,235 is a popular choice for a variety of electronic devices, due to its low power consumption and wide voltage range. Transistors are used for a range of applications, such as signal amplification and power management. The BCW30,235 is a PNP construction with collector voltage rating of 30V, collector current of 1.2A and hFE at minimum of 235, and is suitable for battery operated portable electronics. The operating principle of this type of transistor is relatively straightforward and consists of applying electrical input signals at the emitter and base terminals in order to collect the amplified output signals at the collector terminal.

The specific data is subject to PDF, and the above content is for reference

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