BCW33 Allicdata Electronics
Allicdata Part #:

BCW33-ND

Manufacturer Part#:

BCW33

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 32V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 32V 500mA 200MHz 350m...
DataSheet: BCW33 datasheetBCW33 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCW33
Description

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BCW33 is a single bipolar junction transistor (BJT) which is widely used in switching and low-noise audio amplifiers. The BCW33 is composed of two P-type and one N-type semiconductor regions, forming an NPN structure. This way, it allows both positive and negative current flow through it from collector to emitter, producing an amplified gain depending on the voltage and current applied.

When the base terminal is used with forward bias, a small current flowing through it causes a large amount of current to flow between collector and emitter. This increased current amplifies the signal voltage, resulting in a larger output voltage. The current gain, or amplification factor, is often denoted as βF or hfe. This is highly dependent on the application and must be determined depending on the shape and size of the BJT when creating a circuit.

In addition to the base-emitter junction, the BCW33 has a base-collector junction, which must also be biased. To allow a complete circuit to be made, the base-collector junction must be reverse biased as to remove any collector-emitter current. To make this happen, the bias voltage must be large enough to reverse bias the junction, allowing for an optically isolated amplifier.

In practice, BCW33s are used in many different applications, such as switching circuits, logic circuits, voltage regulators and amplifiers for radio and audio signals. In radio applications, it is used in the antenna circuit to, for example, increase the power of the radio frequency (RF) signal. On the other hand, in low-noise audio systems, these devices can produce a much cleaner signal due to their low noise characteristics.

When operating an amplifier circuit using a BCW33 semiconductor, it is important to design the circuit taking into account the voltage and current requirements of the transistor. A good design is essential to maximize the noise characteristics and the frequency response of the amplified signal. This can be done using a resistor-capacitor circuit, known as a Miller compensation circuit, to improve the high frequency response of the amplifier and dampens the oscillations that may otherwise appear in the output waveform.

In conclusion, the BCW33 is a widely used single bipolar junction transistor due to its simple operation and wide voltage range. It is ideal for both switching and low-noise audio amplifier applications. Its high-frequency response and low noise characteristics combined with a good design can allow for a much cleaner signal with larger amplification.

The specific data is subject to PDF, and the above content is for reference

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