Allicdata Part #: | BCW33LT1-ND |
Manufacturer Part#: |
BCW33LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 32V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 32V 100mA 300mW Surf... |
DataSheet: | BCW33LT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | BCW33 |
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The BCW33LT1 is a single bipolar junction transistor (BJT) and is one of the most popular transistors used across a range of applications. The transistor has an emitter, base, and collector and is made from semiconductor materials. It has three terminals ie. an emitter, base and collector. The emitter and collector both act as electrodes and the base is the control electrode. The transistor amplifies current and acts as a switch, allowing an electrical signal to pass through a circuit.
The BCW33LT1 is used in a variety of applications in industries such as automotive, industrial, medical, and consumer electronics. The transistor\'s ability to switch quickly and have low noise performance has made it ideal for use in high frequency applications, such as radio frequency amplifiers, as well as low-noise preamplifiers. It is also used for switching relays, for over-current protection in power supplies, and for driving LEDs and other small loads in circuit applications.
The BCW33LT1 works by using two different layers of semiconductor materials. A layer of N-type semiconductor material is used on the emitter side and a layer of P-type semiconductor material is used on the collector side. When a voltage is applied to the transistor, the emitter and collector form a PN junction and the current can flow between them. The base terminal acts as a control electrode, and when a current is applied to the base it can control the current flow between the emitter and collector. The base current creates two different currents, one flowing through the emitter to the collector and the other going in the opposite direction. The ratio of the two currents is dependent on the bias applied to the base which is then determined by the external voltage.
The BCW33LT1 has a high current gain and low voltage drop across the collector-emitter junction. It also has low noise performance and can switch quickly. It is widely used in applications such as low-noise amplifiers, current switching, and high-frequency applications. The BCW33LT1 is widely available and is a popular choice of transistor due to its low-cost, low noise performance, and its ability to switch quickly.
The specific data is subject to PDF, and the above content is for reference
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