BCW33LT3G Allicdata Electronics
Allicdata Part #:

BCW33LT3G-ND

Manufacturer Part#:

BCW33LT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 32V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 32V 100mA 300mW Surf...
DataSheet: BCW33LT3G datasheetBCW33LT3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: BCW33
Description

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The BCW33LT3G is a single bipolar junction transistor (BJT) intended primarily for general purpose transistor applications. It has a NPN collector-emitter configuration with a complement PNP type which can be used in a wide range of amplification, switching and other functions. This transistor features low noise, fast switching speed, low collector-emitter saturation voltage and a reliable power gain.ApplicationsThe BCW33LT3G is designed for wide variety of applications such as, but not limited to: switching, audio amplifier, intermediate frequency, high frequency, and applications that require low noise and low power dissipation.In audio amplifier applications, the BCW33LT3G is used to amplify sound signals. In addition, it produces less noise than other types of transistors when operating under high power, which makes it suitable for applications that require high quality output. Furthermore, it has a low collect-emitter voltage drop, which means high efficiency and a low power dissipation.The BCW33LT3G is also an excellent choice for intermediate and high frequency applications. Since this device has a low collector-emitter saturation voltage, it can be easily used in a wide frequency range.In switching applications, the BCW33LT3G can be used to drive a wide range of circuits, and is often used as a low noise switch for digital control systems.Working PrinciplesThe BCW33LT3G is a bipolar junction transistor (BJT), which is a type of transistor consisting of three terminals; the collector, base, and emitter. The way it works is through electrons moving in a loop between the collector and emitter when a base current is applied.When the base current is activated, a small amount of current flows through the emitter-base junction, and more current is drawn from the collector. This increased current is amplified, and the amplified current is then passed to the collector.By adjusting the amount of base current, the amount of collector current can be varied, which makes the BCW33LT3G ideal for a wide range of switching, amplification, and other applications.ConclusionThe BCW33LT3G is a single bipolar junction transistor (BJT) designed for general purpose applications. It features low noise, fast switching speed, low collector-emitter saturation voltage, and a reliable power gain. The BCW33LT3G is used for audio amplifier, intermediate and high frequency, and switching applications. Through its three terminals, the BCW33LT3G uses electrons in a loop from the collector to the emitter when a base current is applied. This process is adjustable and can vary the amount of collector current, making it ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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