Allicdata Part #: | BCW30T116-ND |
Manufacturer Part#: |
BCW30T116 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 32V 0.1A SST3 |
More Detail: | Bipolar (BJT) Transistor PNP 32V 100mA Surface M... |
DataSheet: | BCW30T116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06132 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Base Part Number: | BCW30 |
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The BCW30T116 is an NPN (negative-positive-negative) silicon planar epitaxial transistor device in a surface-mount SOT-343R package. It is rated for a DC current gain of 30, an operating collector power dissipation of 225 mW and a collector-base breakdown voltage of 65 Volts. The device operates from -55 to 150 degree Celsius and is suitable for use in many applications in the automotive and commercial fields.
The BCW30T116 is designed for use in switching, preamplifier, and driver circuits of automotive and industrial applications. The device also offers high current gains, low turn-on and switching times, and low power dissipation — all of which make it ideal for applications that require fast response, high levels of reliability, and low distortion. It is also suitable for use in pre- and post-amplifier stages, relay drivers, and small-signal amplifiers. Additionally, it is suitable for applications such as high-side switches, bootstrapping applications, saturation circuits, and high-impedance references.
The BCW30T116 is primarily composed of an NPN transistor, which is the main component responsible for its operation. This type of transistor has three terminals — the collector, base, and emitter. When a voltage is applied to the base, current is allowed to flow from the collector to the emitter, and from the emitter to the collector, depending on the voltage applied. The magnitude of the current flow is determined by the voltage applied — the higher the voltage, the higher the current, and vice versa. The amount of gain is determined by the amount of current flowing through the collector and emitter.
The principal application of the BCW30T116 is in switching, preamplifier, and driver circuits, as well as for other applications in the automotive and industrial fields. The transistor can be used as a high-side switch, bootstrapping application, saturation circuit, and high-impedance reference. For example, it can be used to drive LEDs, relays, and other types of components in circuits. In addition, the transistor can be used for preamplification and signal conditioning.
The BCW30T116 is also suitable for use in integrated amplifier circuits, power management applications, signal modulation, and signal conversion applications. Due to its low power dissipation, the transistor is well-suited for low-power applications such as standby power control circuits.
The BCW30T116 is an ideal component for circuit designers who require fast response times, high levels of reliability and low distortion. The device also offers high current gains, low turn-on and switching times, and low power dissipation, making it a great choice for applications that require low voltage and current operation. Furthermore, its small size and surface-mount package make it easy to incorporate into any design. Finally, its high collector-base breakdown voltage rating makes it suitable for high-voltage operations.
The specific data is subject to PDF, and the above content is for reference
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