Allicdata Part #: | BCW32LT1GOSTR-ND |
Manufacturer Part#: |
BCW32LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 32V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 32V 100mA 225mW Surf... |
DataSheet: | BCW32LT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 225mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | BCW32 |
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BCW32LT1G is a device used in transistors and belongs to category of Bipolar Junction Transistors (BJT) - Single. This device offers dual-gate General Purpose Field-Effect Transistors operate in high speed switching, rf, and low noise amplifier applications. It provides excellent amplification performance and fast switching. The BCW32LT1G has a maximum rating of 27V for drain-source voltage VDS, 10V for gate-source voltage VGS and 250mA for drain current ID. It features a maximum power dissipation of 350 mW.
BCW32LT1G has wide applications especially in high speed switching, rf, and low noise amplifier applications. BCW32LT1G can be used as a power switch in the system circuit, a wide band amplifier, a current sensor switch, a voltage regulated switch, a current-limiting switch, and a noise ramp generator.
The working principle of BCW32LT1G is that it uses two gates, one named gate1 and the other gate2. When voltage is applied to gate1, it turns on the BCW32LT1G device, while gate2 is used as a path of current. This allows the device to control and switch the current in the system circuit. When the gate1 voltage is increased, the device will be switched on, allowing the voltage from gate2 to supply the current to system circuit. The gate1 voltage equalizes the gate2 voltage, thus allowing the BCW32LT1G device to switch off.
In addition, BCW32LT1G also can be used in applications such as high frequency power amplification, current switch, current sensor, voltage regulation switch and the noise ramp generator. It can be used to regulate the current level in the current switch, and sense the current in the current sensor. In voltage regulation switch, BCW32LT1G is used to control and maintain the output voltage to a certain level. For the noise ramp generator, BCW32LT1G can be used to nullify noise with the ability to generate higher frequencies of noise. All these applications are designed to be low power consumption, high-speed operation and high reliability.
BCW32LT1G can be found in multiple industrial and commercial applications.It is widely used in communication systems, such as data switching, drive circuits, and metering; automotive applications, such as audio systems and sensors; marine electronics applications, such as navigation systems and Satnav;other areas also include transportation applications, medical devices, and power supplies. All these applications require that the BCW32LT1G device features high speed switching, rf, and low noise amplifier.
In conclusion, BCW32LT1G device is a dual-gate General Purpose Field-Effect Transistor used in transistors and belongs to category of Bipolar Junction Transistors (BJT) - Single. It offers excellent amplification performance and fast switching, and can be used in various applications such communication systems, automotive, marine electronics applications and so on. The BCW32LT1G device is also used to regulate the current level in the current switch,sensing the current in the current sensor and generating noise to nullify noise. It is a highly reliable device that is used in multiple industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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