BCW60B,235 Allicdata Electronics
Allicdata Part #:

BCW60B,235-ND

Manufacturer Part#:

BCW60B,235

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 32V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor NPN 32V 100mA 250MHz 250m...
DataSheet: BCW60B,235 datasheetBCW60B,235 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02276
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BCW60
Description

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BCW60B,235 is a type of transistor, which belongs to Transistors - Bipolar (BJT) - Single.It is a low-power NPN switching transistor, suitable for general acts,emitting and switching applications.

The working principle of BCW60B,235 is based on the communication between the N-type material-collector and the P-type material-base, which is called the bipolar junction. An N-type material is an excellent electron conductor and the P-type material is an excellent electricity holder. When the voltage is higher at the collector and the base of the transistor, electrons flow from the collector to the base, creating a low-resistance path from the collector to the emitter. If a large amount of electrons flow through this path, the transistor is turned on. On the other hand, if the voltage of collector is lower than the voltage of the base, the transistor is off.

BCW60B,235 can be used in a variety of fields, including vehicle equipment, mobile phone, personal computer, communications equipment and other electronic equipment. It can be used as a switch or amplifier in these fields. For example, it can be used to switch the power of a vehicle to the windscreen heater, making it possible to turn the windscreen heater on or off when required. Additionally, it can be used in bridges, amplifying a small electrical signal in order to produce a larger signal.

BCW60B,235 is designed with a collector-base voltage (VCB) of 7V, a collector-emitter voltage (VCE) of 40V and a base current (IB) of 500µA. This design makes it a powerful transistor, able to handle a large current and voltage. It is also equipped with an insulation resistance of 100MOhms, making it reliable and stable for use in a variety of electronic circuits.

In summary, BCW60B,235 is a low-power NPN switching transistor, suitable for general acts,emitting and switching applications. It is designed to be able to handle a large current and voltage, as well as being equipped with an insulation resistance of 100MOhms. This makes it an excellent choice for a variety of applications, including vehicle equipment, mobile phone, personal computer, communications equipment and other electronic equipment.

The specific data is subject to PDF, and the above content is for reference

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