BCW66FVL Allicdata Electronics

BCW66FVL Discrete Semiconductor Products

Allicdata Part #:

1727-7501-2-ND

Manufacturer Part#:

BCW66FVL

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: BCW66FSOT23TO-236AB
More Detail: Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 250m...
DataSheet: BCW66FVL datasheetBCW66FVL Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01654
30000 +: $ 0.01489
50000 +: $ 0.01323
100000 +: $ 0.01240
250000 +: $ 0.01103
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Description

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The BCW66FVL is a single, bipolar transistor type belonging to the Simicon family of transistors. These consist of a silicon semiconductor and are used to amplify electrical signals and to switch electrical power. These transistors are commonly used in industrial and consumer electronics, communications systems, and automotive electronics.

Application Field of BCW66FVL:

The BCW66FVL is a high performance NPN transistor, making it suitable for applications requiring high collector current and voltage as well as low noise and power consumption. The BCW66FVL is often used in industrial and consumer electronics applications such as remote controls, automated test equipment, and cellular telephones. Additionally, it\'s used for communication system applications such as automotive applications like temperature monitors, battery chargers, and power supplies.

Working Principle of BCW66FVL:

The BCW66FVL is a double-base NPN transistor. When the processing voltage between them exceeds the threshold voltage, they will enter a conducting state, so that the electrical current between the collector and the emitter will be amplified. The collector-emitter voltage gives an indication of the power gain, and the frequency response determines the voltage gain. The hFE is the current gain and is an indication of how effective the device is in amplifying the input signal.

The working principle of the BCW66FVL is by applying a voltage to the base of the transistor, creating a current through the emitter and collector terminals. This current is the effect of the transistor in controlling the current flow from the collector component. This voltage increase or decrease of the collector current will determine the output of the transistor.

The BCW66FVL has a wide variety of applications due to its ability to deliver high voltages and currents from the collector to the emitter without large losses. It is widely used in many industrial and consumer electronics applications, as well as in communications systems and automotive electronics. Due to its high performance characteristics, the BCW66FVL is an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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