BCW61DTA

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	32V
Vce Saturation (Max) @ Ib, Ic:	550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max):	20nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	380 @ 2mA, 5V
Power - Max:	330mW
Frequency - Transition:	180MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BCW61

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BCW61DTA Transistor - Bipolar (BJT) - Single

The BCW61DTA is a transistors belonging to the Bipolar Junction Transistor (BJT) family and single type, created by NXP, as part of their BCW61 Series Transistors range.

General Description

The BCW61DTA is an NPN Silicon Planar Epitaxial Transistor. Designed for general purpose switching and large signal amplification, this transistor is suitable for applications such as amplifiers, drivers, switches, and small motor controllers. This device is normally used in conjunction with another component, an N-channel MOSFET, to increase the current handling capability.

Features and Benefits

The BCW61DTA offers many features and benefits that make it suitable for a wide range of applications including the following:- Low power consumption- Fast switching speeds- High current capability- Low noise- Easy to use- Cost-effective- ESD protection

Applications

The BCW61DTA is suitable for use in a range of applications including:- Audio amplifiers- Automotive electronic control systems - Load switching- Small motor controllers- DC to DC converters- LED lighting

Working Principle

The BCW61DTA operates by employing the principles of bipolar junction transistors (BJT’s), which use two different semiconductors (n-type and p-type) along with a base connection to control current flow between two other connections, the emitter and collector.The BCW61DTA controls current flow by using a small current at the base connection to switch on a larger current between the emitter and collector. When the base current is used to switch off the larger current between the emitter and collector, this is referred to as “saturation”. The BCW61DTA also uses two transistors, the n-type transistor (illustrated as the blue transistor in the schematic below) and the p-type transistor (illustrated as the yellow transistor in the schematic below). The base of the n-type transistor is connected to the base of the p-type transistor, and the emitters of both transistors are connected together. When a small current is applied to the base of the p-type transistor, it in turn switches on the n-type transistor, which allows a larger current to flow between the emitter and collector of both transistors.

Conclusion

In conclusion, the BCW61DTA is an NPN Silicon Planar Epitaxial Transistor, designed for general purpose switching and large signal amplification. It offers low power consumption and fast switching speeds, making it suitable for a wide range of applications including audio amplifiers, automotive electronic control systems, load switching, small motor controllers, and DC to DC converters. It operates by employing the principles of bipolar junction transistors (BJT’s), which use two different semiconductors and a base connection to control current flow between two other connections, the emitter and collector.

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