BCW68HTA Allicdata Electronics

BCW68HTA Discrete Semiconductor Products

Allicdata Part #:

BCW68HTR-ND

Manufacturer Part#:

BCW68HTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 45V 0.8A SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 330m...
DataSheet: BCW68HTA datasheetBCW68HTA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 330mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCW68
Description

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The BCW68HTA is a single bipolar transistor in a small SOT363 surface-mount package. It is used in a variety of applications, including radio frequency (RF) amplification, signal switching and level setting. In this article, we will look at the application field and working principle of the BCW68HTA.

The BCW68HTA is a NPN bipolar transistor, meaning that it is used to amplify and switch electronic signals by controlling the flow of current between the Emitter and Collector terminals. It has a collector-emitter breakdown voltage of 70V, a collector-base breakdown voltage of 100V, an emitter-base breakdown voltage of 5V, an NPN gain (hFE) of between 100 and 300, a maximum collector current of 0.5mA, and a maximum DC power dissipation of 0.4W. It is available in a SOT363 surface-mount package, making it a very compact component.

The BCW68HTA has a wide range of applications, including radio frequency (RF) amplification, signal switching and level setting. In terms of RF amplification, the BCW68HTA can be used as a pre-amplifier stage in portable radio receivers, as a driver transistor in amplifiers and oscillators, and as an output amplifier in broadband RF links. In terms of signal switching, the BCW68HTA can be used to control the flow of current between two nodes in logic circuits, such as in latch circuits and multiplexer circuits. Finally, in terms of level setting, the BCW68HTA can be used to set logic levels in digital logic circuits, such as in logic gates or flip-flops.

The working principle of the BCW68HTA is based on the transistor effect. The transistor effect is a phenomenon in which current flow is controlled by the amount of voltage between two nodes. In the case of the BCW68HTA, the current flow is controlled by the voltage between the Emitter and Collector terminals. When the voltage between the Emitter and Collector terminals is high enough, it allows current to flow from the Collector to the Emitter of the transistor. When the voltage between the Emitter and Collector terminals is low, it inhibits the flow of current from the Collector to the Emitter.

The BCW68HTA is a versatile component, with a wide range of applications in radio frequency (RF) amplification, signal switching and level setting. Thanks to its small SOT363 surface-mount package, it is also easy to install in most electronic designs. Its working principle is based on the transistor effect, which allows the current flow between the Emitter and Collector terminals to be controlled by the voltage between them.

The specific data is subject to PDF, and the above content is for reference

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