Allicdata Part #: | BCW60DT116-ND |
Manufacturer Part#: |
BCW60DT116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 32V 0.2A SST3 |
More Detail: | Bipolar (BJT) Transistor NPN 32V 200mA 125MHz Sur... |
DataSheet: | BCW60DT116 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 380 @ 2mA, 5V |
Frequency - Transition: | 125MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
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The BCW60DT116 is a PNP transistor that is part of the family of discrete bistable (Bipolar Junction Transistors) and is suited for switching, amplifying and regulating applications in a variety of industries.
The device is rated to handle up to 150 volts of direct current and its collector current can reach into excess of 50mA. The small-signal current gain can reach a maximum of 300. Its maximum power dissipation is 400mW.
Applications for BCW60DT116 BJTs can vary from low-speed switching between two arbitrary states to high-frequency amplifiers. Common uses include DC-DC converter (often used with digital circuitry to regulate the voltages used), audio amplifiers and digital signal processing (DSP) applications, such as frequency modulation (FM), pulse-width modulation (PWM) and other modulation techniques.
The device works in accordance with the basic transistor principle. Current at the base is amplified at the emitter, which is controlled by the flow of current at the base and the connection of the collector to a supply voltage. This process is called current amplification, and it is used to provide a current gain in the form of “beta” value, which is the ratio of collector current to the base current. The working principle is further affected by the input voltage of the base and the impedance connected between the collector and the supply voltage.
When an input voltage is applied between the base and the emitter of the device, a base current is produced which causes a corresponding emitter current. This current is amplified at the collector due to the gain (beta) of the device. The current gain of the BCW60DT116 can be compared to the on-resistance of a switch. The higher the gain value of the device, the lower the equivalent on-resistance will be.
In addition to providing current gain, the BCW60DT116 also has a reverse DC bias when the base is not placed in its “off”state. This advantage is useful for suppressors, damper diodes, and other protective devices when the input voltage is placed in its reversed state for a short period of time. It is also useful for switching circuits using complementary switching signals to extend the use case of the device.
By operating with a voltage divider between the input voltage and the BCW60DT116 base, the device can be used in various circuit designs as a voltage-controlled switch or amplifier. The BCW60DT116 device is a versatile transistor, designed to provide flexibility and robust operation across a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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