BCW60D Allicdata Electronics
Allicdata Part #:

BCW60D-ND

Manufacturer Part#:

BCW60D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 32V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 32V 100mA 125MHz 350m...
DataSheet: BCW60D datasheetBCW60D Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: 125MHz
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCW60
Description

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BCW60D is a widely used NPN-type bipolar junction transistor (BJT). It\'s widely used in a range of low and high current applications, as it can handle more than a million transistor operations and offer excellent switching speeds and performance. The BCW60D is designed to provide reliable, high performance operation in high-voltage and high-current applications such as power supplies, motor control, instrumentation and digital systems.

BCW60D is a type of transistor that utilizes the junction of two types of semiconductor materials, P-type and N-type, to produce a small-signal amplifier or switch. P-type and N-type materials are created by doping different impurities into a pure semiconductor material such as silicon. The P-N junction that is formed is used to control current flow through the device.

The BCW60D, as with all other bipolar junction transistors (BJTs), is a three-terminal device consisting of an emitter, base, and collector. An electric current flows from the emitter to the collector when a voltage is applied to the base, allowing current amplification and switching. Having two differently doped semiconductor regions results in minority charge carriers from the base diffusing into the emitter as the base is forward biased. This type of junction conducts current more easily in one direction than the other and is what makes this device a popular choice for many applications.

Some of the features of the BCW60D makes it an ideal choice for applications that require low noise, high gain, and low power consumption. The BCW60D is designed to have a low NF (Noise Figure) and wide frequency range, which makes it suitable for high gain audio applications. Furthermore, it has an extremely low saturation voltage, enabling low power consumption.

The most common applications of the BCW60D are digital circuits, audio amplifiers, high efficiency control systems and power supplies. In digital circuits, BJTs are used as switches, allowing or blocking low-level signals sent to other ICs. In audio amplifiers, theBCW60D provides high gain for the amplification of audio signals. For high efficiency control systems and power supplies, theBCW60D is used to provide reliable, high current performance.

In conclusion, the BCW60D is a widely used NPN type bipolar junction transistor which is suitable for applications that require high gain, low noise, and low power consumption. It is most commonly used in digital circuits, audio amplifiers, power supplies, and high efficiency control systems. It is designed with a low NF and wide frequency range, as well as an extremely low saturation voltage, making it an excellent choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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