Allicdata Part #: | BCW60CT116-ND |
Manufacturer Part#: |
BCW60CT116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 32V 0.2A SST3 |
More Detail: | Bipolar (BJT) Transistor NPN 32V 200mA 125MHz Sur... |
DataSheet: | BCW60CT116 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 260 @ 2mA, 5V |
Frequency - Transition: | 125MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
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Transistors - Bipolar (BJT) - Single
The BCW60CT116 is part of a family of advanced Bipolar Junction Transistor (BJT) for switching and amplifier applications. In single transistor format, this power transistor is a high speed, low power, low voltage device that is capable of quickly switching high currents. The BCW60CT116 is the ideal choice for power management in a wide range of electronic devices, including cell phones, servers, storage systems, personal computers and set top boxes.
The device is housed in either a surface-mount (SMT) or through-hole (THT) package, and features a built-in resistor and heat sink for improved reliability and robustness. As a high frequency device, it is capable of switching at a frequency of up to 1GHz, with a typical gain of 200mV/V at 1MHz. Its low power consumption, wide operating temperature range and high switching speed make it suitable for high performance and low power applications.
The BCW60CT116 works on the principle of a current-controlled "base" that can be used to control the current flowing between the emitter and collector. This transistor consists of three P-type layers and two N-type layers which form a junction, called the base-emitter junction. When a current is applied to the base, electrons flow across the PN junction, and in turn cause current to flow between the emitter and collector. As current flows through the base, it increases the current flowing between the emitter and collector, and this can be used to amplify or switch a signal.
This device is available in various forms, such as Real Time Computing (RTC) and Remote Power Supply (RPS). RTC offers the flexibility of a real time controlling the current and the accuracy of a power device, while RPS can be used for remotely controlling certain parts of electronic systems such as industrial processes and telecommunications. It also operates in a range of different modes, offering a unique combination of performance benefits.
At a system level, the BCW60CT116 provides for a wide range of applications. This includes circuits for micro-controllers, amplifiers, wireless communication systems, medical electronics, consumer electronics and automotive applications. Furthermore, it can be used in circuit protection systems to ensure safety, stability and signal integrity in complex systems.
The BCW60CT116 is a versatile device that offers a wide range of applications. It is capable of quickly switching high currents with low voltage and its high frequency allows for efficient power management. Its low power consumption and wide operating temperature range make it suitable for high performance and low power requirements. Moreover, its built-in resistor and heat sink provide robustness and reliability, and its range of forms provide flexibility and a unique combination of performance benefits.
The specific data is subject to PDF, and the above content is for reference
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