BCW68HR Allicdata Electronics
Allicdata Part #:

1727-7511-2-ND

Manufacturer Part#:

BCW68HR

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: BCW68HSOT23TO-236AB
More Detail: Bipolar (BJT) Transistor PNP 45V 800mA 80MHz 250mW...
DataSheet: BCW68HR datasheetBCW68HR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02109
6000 +: $ 0.01902
15000 +: $ 0.01654
30000 +: $ 0.01489
75000 +: $ 0.01323
150000 +: $ 0.01103
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 250mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - SingleBCW68HR is a single-transistor device designed for use in analog applications. This device offers a variety of features, including low-cost performance, wide voltage range, low operating temperature range, and high current gains. The device is designed for high reliability in low power applications, for both domestic and international applications. The BCW68HR features a power rating of 1.5 watts and a peak collector current of 200 mA. The device is a single bipolar transistor with a collector-emitter voltage rating of up to 18 V. This device is suitable for use in automotive systems and applications involving varying temperatures. The device is also suitable for use in military applications where high input power might need to be converted to a lower output voltage.The device utilizes a silicon-based, NPN type of bipolar transistor. The device is manufactured with a planar epitaxial construction, which helps to ensure a low operating temperature. This type of construction also helps to dissipate thermal energy in a more efficient manner, allowing for better thermal performance. The device utilizes a high current gain of up to 200. This ensures that the device can be used in a variety of applications where output voltage regulation is needed. The device also features an adjustable current gain that can be set by simply adjusting the base-emitter voltage. The base-emitter voltage is adjustable for both positive and negative currents, allowing for maximum versatility and adjustable current gain. The device features a very low operating temperature range, from -55 °C to +125 °C. This ensures that the device can be used in a variety of applications, both indoors and outdoors, without the risk of overheating or damage.The device is also designed with a low voltage drop, which helps to reduce the power consumption while increasing the efficiency of the device. The device is configured with a low noise floor, which helps to reduce interference in sensitive applications. The device is available in different package types, which allows for easier installation and flexibility for different applications. The device is available in a variety of designs, including DIP, SIP, and packages with removable leads.The BCW68HR is an excellent choice for applications requiring high-performance and reliability. The device is designed for high current gains, ensuring that it can be used in a variety of applications. The device is also designed with a low power consumption, a low voltage drop, and a low noise floor, allowing for a more efficient operation. The device is also available in a variety of package types, making it more convenient and flexible for different applications.

The specific data is subject to PDF, and the above content is for reference

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