Allicdata Part #: | 1727-7511-2-ND |
Manufacturer Part#: |
BCW68HR |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BCW68HSOT23TO-236AB |
More Detail: | Bipolar (BJT) Transistor PNP 45V 800mA 80MHz 250mW... |
DataSheet: | BCW68HR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02109 |
6000 +: | $ 0.01902 |
15000 +: | $ 0.01654 |
30000 +: | $ 0.01489 |
75000 +: | $ 0.01323 |
150000 +: | $ 0.01103 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 100mA, 1V |
Power - Max: | 250mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - Bipolar (BJT) - SingleBCW68HR is a single-transistor device designed for use in analog applications. This device offers a variety of features, including low-cost performance, wide voltage range, low operating temperature range, and high current gains. The device is designed for high reliability in low power applications, for both domestic and international applications. The BCW68HR features a power rating of 1.5 watts and a peak collector current of 200 mA. The device is a single bipolar transistor with a collector-emitter voltage rating of up to 18 V. This device is suitable for use in automotive systems and applications involving varying temperatures. The device is also suitable for use in military applications where high input power might need to be converted to a lower output voltage.The device utilizes a silicon-based, NPN type of bipolar transistor. The device is manufactured with a planar epitaxial construction, which helps to ensure a low operating temperature. This type of construction also helps to dissipate thermal energy in a more efficient manner, allowing for better thermal performance. The device utilizes a high current gain of up to 200. This ensures that the device can be used in a variety of applications where output voltage regulation is needed. The device also features an adjustable current gain that can be set by simply adjusting the base-emitter voltage. The base-emitter voltage is adjustable for both positive and negative currents, allowing for maximum versatility and adjustable current gain. The device features a very low operating temperature range, from -55 °C to +125 °C. This ensures that the device can be used in a variety of applications, both indoors and outdoors, without the risk of overheating or damage.The device is also designed with a low voltage drop, which helps to reduce the power consumption while increasing the efficiency of the device. The device is configured with a low noise floor, which helps to reduce interference in sensitive applications. The device is available in different package types, which allows for easier installation and flexibility for different applications. The device is available in a variety of designs, including DIP, SIP, and packages with removable leads.The BCW68HR is an excellent choice for applications requiring high-performance and reliability. The device is designed for high current gains, ensuring that it can be used in a variety of applications. The device is also designed with a low power consumption, a low voltage drop, and a low noise floor, allowing for a more efficient operation. The device is also available in a variety of package types, making it more convenient and flexible for different applications.The specific data is subject to PDF, and the above content is for reference
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