BD242CTU Allicdata Electronics
Allicdata Part #:

BD242CTU-ND

Manufacturer Part#:

BD242CTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 3A TO-220
More Detail: Bipolar (BJT) Transistor PNP 100V 3A 40W Through ...
DataSheet: BD242CTU datasheetBD242CTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Base Part Number: BD242
Description

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The BD242CTU is a single transistor bipolar junction (BJT) transistor from NXP Semiconductors. Designed for medium power and sensitivity applications, the BD242CTU features low noise and power efficiency, making it ideal for Class D audio amplifier, wireless communications, general purpose switching and digital circuit applications, among other uses.

The BD242CTU features an NPN structure, with collector-to-base voltage ratings of up to 50V and a total power dissipation of 0.25W. The device offers an hFE of 65 and a collector current range of up to -2A. The transistor is also rated for up to -100mV common-mode noise, which makes it suitable for class-D audio amplification applications.

The BD242CTU is designed to operate with a wide range of supply voltages, from 2.5V to 24V. It also features a high cutoff frequency of 1GHz, which allows it to accommodate high frequency signals, such as GSM cellular signals. With its low input and output capacitance, the transistor enables high-speed switching and data transmission.

The BD242CTU also features a wide temperature range, from -55°C to +150°C, which makes it suitable for operation in a variety of ambient temperatures. The device’s low power consumption makes it an ideal choice for applications that require minimal power consumption.

The operation of the BD242CTU is based on the transistor-base-collector current flow model, where the current is supplied from the base to the collector. When the current flow exceeds a certain level, the transistor is said to be in “saturation” and no further current can pass through the collector-base junction. Conversely, when the current flow is below the specified level, the transistor is said to be in “cut-off” state.

The BD242CTU is capable of both switching and linear amplification applications, depending on the operating conditions of the transistor. In switching applications, the device is used to switch on and off the current flow from the collector to the base. In linear applications, the device is used to modulate the current flow from the collector to the base.

The BD242CTU is ideal for use in a wide variety of applications such as line drivers, digital circuits, high speed switching and audio applications. Its wide operating range and low power consumption make it an ideal choice for a variety of medium power and sensitivity applications. The device is also capable of providing excellent signal-to-noise ratio, allowing it to be effectively used in radio, cellular and other RF applications. The transistor is also capable of providing high gain and speed, which makes it well-suited for applications such as DC/DC converters.

The specific data is subject to PDF, and the above content is for reference

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