BD242B Allicdata Electronics

BD242B Discrete Semiconductor Products

Allicdata Part #:

497-16144-5-ND

Manufacturer Part#:

BD242B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS PNP 80V 3A TO-220
More Detail: Bipolar (BJT) Transistor PNP 80V 3A 2W Through Ho...
DataSheet: BD242B datasheetBD242B Datasheet/PDF
Quantity: 1463
Stock 1463Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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The BD242B is a single NPN bipolar transistor commonly used for switching purposes. This versatile device has the capability to handle a current up to 1.5 A (dc) and remains a popular choice for many general purpose applications where fast switching and low power dissipation are required.

This transistor is mainly used for applications such as audio amplifiers, switching circuits, power transistors and other similar tasks requiring a low-voltage, low-power solution. The BD242B is also used in analogue circuitry as well as digital logic systems.

The BD242B is especially useful in applications that require high-frequency switching and digital logic circuits. This device is capable of switching signals at high frequency, allowing it to be used in a variety of circuits, such as those found in television and audio equipment.

The BD242B is also known for its flexibility and ability to provide a wide range of operating conditions. It can operate in temperatures between -55°C and 150°C with a total dissipation up to 625 mW. Its maximum collector-emitter voltage (Vce) is 50V while its breakdown voltage is 75V. The base-emitter voltage (Vbe) is 5V and the maximum collector current (Ic) is 600mA.

This device has a typical gain (hFE) of 40 to 200, meaning that its collector-emitter voltage is 40 to 200 times the base-emitter voltage. The BD242B has a good frequency response, with a maximum frequency of 250 MHz, and its gain-bandwidth product is typically 10 MHz.

In terms of construction, the BD242B consists of two NPN transistors housed in a single plastic package. It has two internally connected diodes and one externally connected diode. The transistors have a common base, but the collector of one is connected to the base of the other. This allows for current to flow between the two transistors when the base-emitter junction of each is forward biased.

The BD242B is a popular choice for many general purpose applications where fast switching and low power dissipation are required. It is recognised for its flexibility and its stable gain and low operating temperature. The BD242B is a reliable, inexpensive option for electronic switches or small logic circuit applications.

The specific data is subject to PDF, and the above content is for reference

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