BD243B-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 1A, 6A
Current - Collector Cutoff (Max):	700µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 3A, 4V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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BD243B-S is a Single Bipolar Junction Transistor (BJT) designed for high current, low noise and low voltage applications. It has a low frequency gain of 150 to 200, with an output voltage of up to 40 VDC. The device consists of an N-type collector, an insulated gate and an N-type emitter. It is a highly versatile transistor, making it suitable for a range of different applications.One of the main applications of the BD243B-S is power supply related. It can be used in Switch Mode Power Supplies (SMPSs) as a switch or for local regulation. The BD243B-S can also be used to control DC motor speed, by employing it as an H-Bridge for PWM switching. As it is a high-current and low-noise BJT, it is also suited for audio amplification circuits, providing accurate, high-quality amplification.The working principle of BD243B-S involves the conduction of electrons from the collector to the emitter when the base of the transistor is positively biased. The collector current is strongly dependent on the base current, and as the base current increases, the collector current also increases. A large Applied volts (Vce) is applied between the collector and emitter, which results in current amplification.When a voltage is applied to the base of the transistor, the electrons in the base layer are attracted to the positive sub-collector region, which facilitates the conduction of electrons to the collector. As the electrons move to the collector, the concentration of electrons in the base region is reduced, which further reduces the base current and thus decreases the current gain of the transistor.The current gain of the BD243B-S is mainly determined by the Electron Mobility (ESM). The ESM is a measure of how easily electrons can move through the base-collector junction. The higher the ESM, the higher the current gain of the transistor. Other factors, such as the temperature and voltage, also have an effect on the transistor performance. The BD243B-S is generally rated for operation in up to 105°C environments, and can operate in pulse width modulation (PWM) switching ranges of up to 200 kHz.The BD243B-S is also designed to have a high breakdown voltage. This means it can handle larger Vce in the collector-to-emitter voltage drop than some other bipolar junction transistors. It also has very low leakage current, allowing it to be used in applications where low power consumption is desirable.As the BD243B-S is a highly versatile transistor, it can be found in numerous applications. It can be used to develop systems with low-power and high-efficiency, such as clear-channel radio systems, as well as in power supplies, audio amplifiers and DC motor speed controllers. It is also a popular transistor for hobby electronics projects, providing a level of performance that is suited for general application.

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