Allicdata Part #: | BD244B-S-ND |
Manufacturer Part#: |
BD244B-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP 80V 6A |
More Detail: | Bipolar (BJT) Transistor PNP 80V 6A 2W Through Ho... |
DataSheet: | BD244B-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1A, 6A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 3A, 4V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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The BD244B-S transistor is classified as a single bipolar junction transistor (BJT). It is designed for use in a variety of electronic applications, such as amplifiers, switches, logic gates, and other signal processing circuits. It is mainly used in circuits that require low voltage, low current, and reliable operation.The BD244B-S is mostly composed of silicon P-N junctions. It consists of a three-layer structure of a P-type, an N-type and a P-type semiconductor material, separated by a thin layer of insulation. The BD244B-S has three connections, called terminals, each referring to a specific layer of its structure. The emitter (E) is the P-type layer, the collector (C) is the N-type layer and the base (B) is the other P-type layer.When a sufficient amount of voltage is applied to the base terminal, it causes a current to flow from the emitter to the collector terminal. This current is known as the base current and it is limited by the transistor\'s operating characteristics. The amount of current that flows from the collector to the emitter is called the collector current. This current is usually much larger than the base current, and it is determined by the applicable current gain, known as the hFE.The BD244B-S can be used to amplify signals, as it introduces a gain that is proportional to its hFE. It can also be used as a switch, for which it is connected as a common emitter and reverse-biased by an appropriate voltage diplexer. This configuration allows the transistor to act like a switch, as it can be either turned on or off.The BD244B-S can also be used as a logic gate. It is connected in a common emitter configuration, and the input voltage is connected to the base terminal. When the input voltage is high, the transistor is turned on and the output voltage is high. When the input voltage is low, the transistor is turned off and the output voltage is low. This configuration is commonly used in digital circuits.The BD244B-S also has high power efficiency and good noise immunity. It can handle high frequencies and has a low saturation voltage, which makes it suitable for use in high-power switching applications. It is also capable of generating large amounts of power, which makes it suitable for use in motor control and power amplifiers.The BD244B-S is a versatile transistor that can be used in a wide range of applications. Its small size, low cost, and reliable operation make it an attractive choice for many electronic applications. Additionally, its three-terminal structure allows for convenient integration into circuits, making it easy to use.
The specific data is subject to PDF, and the above content is for reference
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