Allicdata Part #: | BD246-S-ND |
Manufacturer Part#: |
BD246-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP 45V 10A |
More Detail: | Bipolar (BJT) Transistor PNP 45V 10A 3W Through H... |
DataSheet: | BD246-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 2.5A, 10A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 4 @ 10A, 4V |
Power - Max: | 3W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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The BD246-S is a special type of single bipolar junction transistor (BJT). This device is built with a low power consumption and is used in a variety of applications ranging from switching, amplifying, and oscillating circuits. It can also be used in various applications that require higher switching speed, such as high-speed switching power supplies, high-speed microprocessor systems, high-speed motor control, and high-frequency applications.
The transistor has an epitaxial layer of silicon on its base and a metal-oxide-semiconductor field-effect transistor (MOSFET) at its emitter. It has a total of three connections—the emitter, base, and collector. The operation of the transistor is based on the transistor action principle, which states that the current flowing through the device is related to the voltages applied between the base and emitter terminals.
A typical circuit symbol for the BD246-S is shown in the diagram below.
In a DC biased circuit, the current flowing through the device is related to the voltage change between the base and emitter terminals. If a voltage is applied between the base and emitter terminals, the collector current (Ic) will increase as the voltage rises. This increase of collector current (Ic) is known as the collector saturation.
At the same time, a voltage drop between the base and emitter will cause the collector current (Ic) to decrease, which is known as the active region of operation. The collector current (Ic) will reach its maximum when the base-emitter voltage reaches its breakdown voltage. The voltage between the base and emitter must be greater than the breakdown voltage in order to ensure saturation and full power dissipation.
The BD246-S can be used in both linear and switching applications. In linear applications, the BD246-S is used as an amplifier for audio and video signals or DC signals. The transistor can also be used in switching applications such as high-speed switching power supplies and high-frequency applications.
The BD246-S can also be used in a variety of circuits, such as oscillators and line drivers. In a line driver, the BD246-S is used to drive the signal from the voltage sources to the load. In an oscillator, the transistor is used to produce oscillations.
The transistor can also be used in a variety of logic circuits, such as logic gates and flip-flops. In a logic gate, the transistor is used to produce high and low logic levels. In a flip-flop, the transistor is used to produce either a low or a high level output.
The BD246-S is a very versatile transistor and can be used in many different circuits. Its compact size and low power dissipation make it a popular choice for applications that require low power consumption and high speed switching circuits.
The specific data is subject to PDF, and the above content is for reference
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