BD680G

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 1.5A, 3V
Power - Max:	40W
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-225AA
Base Part Number:	BD680

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Introduction

The BD680G transistor is a PNP bipolar junction transistor (BJT). This transistor is also known as BD680 and it is commonly used in a variety of different applications. The BD680G transistor is manufactured by Toshiba Semiconductor and can be used in power supply design, audio amplifier design, and other applications where high voltage and high current gain is needed.

Features of the BD680G Transistor

The BD680G transistor is a PNP device and it has a maximum collector-emitter voltage of 80v and a maximum power dissipation of 1.8W. It is a general purpose transistor with a low saturation voltage, excellent high-frequency characteristic, and superior switching characteristics. It has a maximum collector current of 600mA, a maximum frequency of more than 1GHz, and a maximum collector-base capacitance of 1pF.

BD680G Applications

The BD680G transistor is commonly used in power supply design, audio amplifier design, and other applications where high voltage and high current gain is needed. It is also used in switching applications such as switching logic signals, voltage-controlled oscillators (VCOs), and frequency synthesizers. It is an ideal choice for low power audio amplifier designs, particularly for use in battery-powered devices such as portable radios, portable cassette players, and portable CD players. It is also used in RF applications such ad RF amplifier stages and RF oscillator stages.

BD680G Operating Principle

The BD680G is a PNP transistor, which means it requires a negative voltage at the base terminal to turn it on. When a negative voltage is applied to the Base terminal, a current flows from the Emitter to the Collector, turning the transistor on. This current flow is then amplified by the transistor, allowing it to act as an amplifier or switch. The Collector-Emitter voltage controls the gain of the transistor, and the Base-Emitter voltage determines the amount of current flowing through it.

Conclusion

The BD680G transistor is a PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor. It is commonly used in power supply design, audio amplifier design, and other applications where high voltage and high current gain is needed. It has a maximum collector-emitter voltage of 80v and a maximum power dissipation of 1.8W. It is an ideal choice for low power audio amplifier designs, particularly for use in battery-powered devices such as portable radios, portable cassette players, and portable CD players. The BD680G operates on the principle of applying a negative voltage at the base terminal to turn it on, enabling current to flow from the emitter to the collector.

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