BD682 Allicdata Electronics

BD682 Discrete Semiconductor Products

Allicdata Part #:

497-7178-5-ND

Manufacturer Part#:

BD682

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS PNP DARL 100V 4A SOT-32
More Detail: Bipolar (BJT) Transistor PNP - Darlington 100V 4A ...
DataSheet: BD682 datasheetBD682 Datasheet/PDF
Quantity: 1910
Stock 1910Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32-3
Base Part Number: BD682
Description

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, :

The BD682 is a Medium-Power NPN Bipolar Transistor. This component has a high breakdown voltage and a very wide range of operating currents. It is designed to provide fast switching, improved heat dissipation, and low noise in small packaged components.

The BD682 is mainly used as a switch or low-noise amplifier in audio equipment and automotive systems. This component is also used in consumer and industrial applications for medium-power control and switching technology. The component is also often used in power supply designs.

The main characteristics and operational performance of the BD682 are listed below:

  • Voltage Rating: 40 volts
  • Capacitance Rating: 30 pF
  • Power Dissipation: 500 milliwatts
  • Collector-Emitter Voltage: 10 volts
  • Maximum Collector Current Rating: 1.5 amperes

The working principle of the BD682 is based on the classic NPN transistor polarities. It is composed of two p-type (base) and one n-type (collector and emitter) regions. When an input voltage is applied between the base and emitter, an electric field will be generated. This field will attract electrons from the emitter to the base region, creating a conductive path between the collector and emitter.

As the Electric current flowing through the collector-emitter region increases, the base depletion region decreases. This causes the depletion region to become thinner, enabling the transistor to turn on faster. As the base current keeps increasing, the collector-emitter voltage decreases, allowing for enhanced operation.

The BD682 is widely used in drivers, amplifiers, and other audio and automotive applications. This component features high-frequency operation and ultra-low noise, making it a great choice for sensitive audio and precision control circuits. It is also used in voltage control and power monitoring systems.

In addition, the BD682 can be used in power amplifiers, power switching circuits, and voltage regulators. The component is also ideal for low-speed analog circuitry, such as logic level controllers and shifters. It is often used in PWM thyristor motor controller circuits.

Overall, the BD682 is a highly reliable, medium-power NPN Bipolar Transistor that offers excellent performance for a variety of applications. It provides fast switching, improved heat dissipation, and low noise in small packaged components.

The specific data is subject to PDF, and the above content is for reference

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