Allicdata Part #: | BD681S-ND |
Manufacturer Part#: |
BD681S |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 4A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 4A ... |
DataSheet: | BD681S Datasheet/PDF |
Quantity: | 902 |
1 +: | $ 0.39690 |
10 +: | $ 0.35154 |
100 +: | $ 0.26945 |
500 +: | $ 0.21300 |
1000 +: | $ 0.17040 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 30mA, 1.5A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 1.5A, 3V |
Power - Max: | 40W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | BD681 |
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The BD681S is a NPN silicon epitaxial planar transistor commonly used for medium power linear and switching applications. It is a single transistor that is suited for the design of various voltage amplifiers, audio and power switching circuits, motor control circuits, and in many different types of industrial equipment.
The BD681S has an active base and collectors that are connected to the emitter. The material used for these components is an NPN silicon epitaxial planar transistor. This type of transistor offers a high breakdown voltage and a low collector-emitter saturation voltage.
The BD681S is optimized for switching applications, as it has a low total gate charge, a small on-resistance, and a low threshold voltage. The switching speed is also improved due to the low static capacitance and low junction capacitance. This enables the transistor to operate reliably in both fast changing and static conditions.
When it comes to the application fields of the BD681S, the most popular are audio, power supply, and motor control circuits. This transistor is also favorable for voltage amplifiers, where a low noise level is desired. When used in power switching circuits, the high breakdown voltage of the BD681S is beneficial. It also has a high peak collector current and can handle high voltage/power switching applications.
The working principle of a BD681S involves the transfer of current between two terminals. When current is applied to the base terminal, electrons move from the base to the emitter, thereby creating a current flow. This current is then passed through the collector, and through the load connected to the collector. This current flow results in a voltage gain in the collector-emitter circuit. The gain is also affected by the ratio between the collector and emitter currents, as well as by the base-emitter voltage.
The BD681S is an ideal choice for voltage amplifiers and power switching circuits, due to its low noise level and high breakdown voltage. Its wide operating temperature range, low total gate charge, low static capacitance and junction capacitance, and the possibility of switching higher voltages and power loads, make it a great option for modern audio and power management systems.
The specific data is subject to PDF, and the above content is for reference
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