BD681G

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The BD681G is a kind of NPN silicon planar epitaxial transistor. This device is primarily intended for audio, linear, battery-operated, line-operated, and once-upon-a-time tone applications. This planar type of transistor offers low noise characteristics, fast switching speeds, and high breakdown voltage.

The BD681G has a very versatile application. This type of transistor can be used for audio and linear applications, for example as an amplifier or for tone applications such as for line or battery operatedonce-upon-a-time tone generators. It can also be used in automatic controls, power supplies and switching circuits. Furthermore, this transistor is also suitable for special applications such as aircraft navigation system and hearing aid circuits.

The BD681G operates at collector-emitter voltage maximum ratings of 30V, collector current rating of 50mA and power dissipation ratings of 400mW. It also has an hFE range of 200-1000 and a base-emitter voltage max of 6V. The junction temperature thermal resistance is 175°C/W and the storage temperature range is -55 to 150°C. Its maximum collector-emitter saturation voltage is 0.4V.

The BD681G\'s working principle is quite simple. It is a bipolar transistor, which means it has three terminals: base (B), collector (C) and emitter (E). When base-emitter voltage is applied, electrons flow from the emitter to the collector. This causes the current flow between the collector and emitter to increase. When the un-biased voltage difference between the base and emitter exceeds 0.7V, the current flow in the transistor increases exponentially. The current flow is then proportional to the base current and can reach saturation at high base-emitter voltage.

The BD681G is an ideal device for many different applications. Its low noise, fast switching speeds and high breakdown voltage make it a great choice for audio and linear applications as well as for special applications like aircraft navigation and hearing aid circuits.

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