Allicdata Part #: | BD681STU-ND |
Manufacturer Part#: |
BD681STU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 4A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 4A ... |
DataSheet: | BD681STU Datasheet/PDF |
Quantity: | 4640 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 30mA, 1.5A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 1.5A, 3V |
Power - Max: | 40W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
Base Part Number: | BD681 |
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The BD681STU is a silicon epitaxial-base Planar PNP transistor designed for audio and other linear applications. Conforming to JEDEC SOT-223 and TO-92 packaging standards, the BD681STU offers excellent performance in most audio and general purpose applications. The BD681STU has a wide variety of features, including a low Vce(sat) for bipolar transistors and a high Breakdown voltage of 45 V. Other features include low noise, fast switching speed, high gain, and high hFE.
The BD681STU is a three-lead bipolar transistor, meaning it is constructed from two layers of semiconductor material, with a base region between the two layers. This particular transistor is a silicon transistor, meaning the layers are made of silicon-doped semiconductor. The collector is the main terminal of the transistor, and is the positively charged material layer. The base terminal is the control element of the transistor, receiving current that allows current to flow between the collector and emitter of the transistor. The emitter is the other main terminal of the transistor, and is the negatively charged layer.
The BD681STU operates with a collector-base voltage of 45 V and delivers a safe operating area at rated values of 1 A collector current and 15 W power dissipation. The BD681STU features a wide variety of features, including high-speed switching; a low Vce(sat) of 0.5 V at Ic = 0.1 A; a low storage time of 10 ns; and a collector-emitter voltage of 80 V. Additionally, the device has a high break-down voltage of 90 V, making it ideal for use in low-voltage circuits. The BD681STU also has a low collector-emitter saturation voltage of 0.2 V and a low power dissipation of 2.5 W.
The BD681STU is well suited for use in audio amplifiers, video amplifiers, linear and switching power supplies, and other types of amplifier circuits. The device can also be used in low-noise circuits, as the device has a low total noise figure of 5.5 dB. The device also has a high gain-bandwidth product of 350 MHz, making it suitable for use in high-frequency applications. Additionally, the device is capable of switching speeds of up to 50 ns, making it ideal for use in high-speed applications.
The BD681STU is a cost-effective device, offering excellent performance in most audio and general purpose applications. The device features a number of features, including high gain-bandwidth, low noise, low storage time, and fast switching speed, making it well suited for use in a variety of applications. The device is also well suited for use in low-voltage circuits, as the device has a high breakdown voltage of 90 V. Overall, the BD681STU is a great choice for use in audio, video, and other linear applications.
The specific data is subject to PDF, and the above content is for reference
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