BD682S

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Bipolar Junction Transistors (BJTs or BJT) are composed of two p-type and n-type semiconductor junctions. The BD682S Transistor is a high power general purpose silicon NPN Transistor. This type of transistor is suitable for a wide range of applications, and is available in single, dual and multi-track configurations. Its wide range of compatible packages make it ideal for a variety of applications.

The BD682S is best suited for low speed switching, low voltage amplifiers, and Class A/B audio amplifiers. The transistor\'s NPN design is a type of Darlington process, where the base-emitter junction is inverted and the collector-base junction operates as a normal PNP transistor. This design offers higher current gain compared to a standard NPN transistor, making it suitable for medium and high power applications. The BD682S also offers a higher power-handling capacity, allowing it to operate within high power amplifiers.

The BD682S is a very versatile transistor when it comes to working principles. Its wide current gain characteristics and wide operating temperature range make it suitable for a vast range of applications. It has a relatively low forward base-emitter voltage, allowing it to be used as an amplifier in circuits that require low voltage switching. It is also a great choice for components in medium and high power audio amplifiers, as it offers superior polarity control and thermal stability.

In addition to its versatile working principles, the BD682S also features excellent device parameters. The device features a DC current gain (hfe) of around 100, a breakdown voltage of 30V, and a collector-emitter saturation voltage of 0.4V. It also has an exceptionally low noise floor and wide frequency range, making it suitable for a variety of audio applications. The BD682S also has long-term reliability, with a maximum safe operating junction temperature of up to +175°C and a thermal resistance of 0.2°C/W.

The BD682S Transistor is a versatile, reliable, and economical device suitable for a wide range of applications. Its compatibility with a large number of packages, flexible working principles, and excellent device parameters make it a great choice for general purpose applications, and gives the user a wide range of options when it comes to design and fabrication.

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