BDW63A-S Allicdata Electronics
Allicdata Part #:

BDW63A-S-ND

Manufacturer Part#:

BDW63A-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN DARL 60V 6A
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 6A ...
DataSheet: BDW63A-S datasheetBDW63A-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 4V @ 60mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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Bipolar junction transistors (BJTs) are three terminal solid state electronic devices that consist of two p–n junctions, placed as a back-to-back connection. They can be used to amplify or switch electronic signals and are the most commonly used transistors in the world. The BDW63A-S is a type of bipolar junction transistor specifically designed for high-temperature industrial applications. This article will discuss the application field and working principle of the BDW63A-S.

Features of the BDW63A-S

The BDW63A-S is a PNP high-temperature bipolar junction transistor (BJT) with a high EMISSION current gain and a collector-emitter breakdown voltage of 155 V. It has a power dissipation of 625mW and a collector-emitter saturation voltage of 0.2 V. It has a maximum collector current of 1 A and a maximum collector-base voltage of 40 V. The BDW63A-S is designed to operate at a maximum junction temperature of 150°C, making it ideal for high-temperature industrial applications.

Application Fields

The BDW63A-S is mainly used as a switch in high-temperature industrial applications. It can also be used in high-temperature amplifiers and regulators, and in temperature sensing applications. It is also suitable for industrial temperature control circuits, overcurrent protection circuits and gain control circuits.

Working Principle

The BDW63A-S is a three-terminal device consisting of two p – n junctions placed back to back. It consists of a collector, a base, and an emitter. The collector is connected to the higher voltage of the two input signals and the emitter is connected to the lower voltage signal. When a small current is passed through the base, the collector-emitter current is amplified. This amplification effect is the basis of the BJT\'s ability to amplify or switch input signals.

Conclusion

The BDW63A-S is a PNP high-temperature bipolar junction transistor designed for high-temperature industrial applications. It has a power dissipation of 625mW, and a maximum collector current of 1A. It is mainly used as a switch in high-temperature applications and can also be used for temperature sensing and gain control. Its working principle is based on the amplification effect of the BJT\'s collector-emitter current.

The specific data is subject to PDF, and the above content is for reference

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