BDW64C-S Allicdata Electronics
Allicdata Part #:

BDW64C-S-ND

Manufacturer Part#:

BDW64C-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP DARL 100V 6A
More Detail: Bipolar (BJT) Transistor PNP - Darlington 100V 6A ...
DataSheet: BDW64C-S datasheetBDW64C-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 60mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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Bipolar Junction Transistors (BJTs) are a type of transistor containing two PN junction. The BDW64C-S is a popular BJD manufactured by Supperco and widely used in applications such as power management, motor control, and heating. In this article, we will discuss the application field and working principle of the BDW64C-S.

The BDW64C-S can be utilized in several scenarios due to its unique features. Firstly, this transistor has the capability to control large currents and voltage, making it an ideal choice for applications such as motor control. Furthermore, it has a fast switching speed and is suitable for use in high-frequency applications such as converter circuits. In addition, it is incredibly reliable due to its superior packaging and can withstand high temperatures.

Its working principle is based on the concept of bipolar current flow. When the Base-Emitter voltage (VBE) is applied to the transistor, a minority carrier is formed at the Emitter-Base junction. This allows a current flow between the Collector and Emitter. By controlling the voltage at the Base terminal, the Collector current can be controlled.

As the current flowing through the Collector-Emitter increases, a point is reached where the Emitter current reaches its maximum. This is known as saturation and occurs when the voltage between the Base-Emitter junction is greater than the Base-Collector voltage (VBC). On the other hand, when the Base current is small enough, the current passing through the Collector-Emitter junction is reduced. This is known as cut-off and occurs when the voltage between the Base-Emitter jQuery is less than the Base-Collector voltage (VBC).

The BDW64C-S is equipped with several features that make it ideal for use in certain applications. The first is its low saturation voltage, which allows it to operate efficiently in regions of low voltage. It also has a high current capacity and high power dissipation. This makes it suitable for use in applications such as high-power motor control. Furthermore, the BDW64C-S has a low reverse-current leakage, making it effective for use in situations with large amounts of noise present.

Additionally, the BDW64C-S transistor can be used in many other applications. It can be used as a power switch in amplifier circuits, a device for controlling the current in circuits, or as a voltage regulator in voltage reference circuits. Furthermore, due to its fast switching speed, it is also suitable for use in high-frequency applications such as converter circuits.

In summary, the BDW64C-S transistor is an ideal choice for a variety of applications due to its high current capacity, low saturation voltage, and fast switching speed. By controlling the current at the Base terminal, the transistor can be turned on or off easily and can be used in applications such as motor control, power management, and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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