BDW63B-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	4V @ 60mA, 6A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 2A, 3V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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Bipolar (BJT) transistors are semiconductor devices used as switches and amplifiers, which can be used to route and amplify signals in an electrical circuit. The BDW63B-S is a type of single transistor Bipolar junction transistor (BJT) that is commonly used in many different applications.The BDW63B-S is a medium power PNP transistor, which means it has three terminals: the base, the collector and the emitter. The base terminal is used to control the collector current by allowing electrons to flow from the emitter to the collector when a current is applied to the base. The collector is used to collect the current in the circuit, and the emitter is used to supply electrons to the collector.The BDW63B-S has a high switching speed and high gain, making it suitable for high speed switching applications such as switched-mode power supplies (SMPS), AC-DC and DC-DC controllers, motor control applications, and other digital applications. It can also be used in low-power linear applications such as low-noise amplifiers, low-power digital circuits and voltage references.The BDW63B-S has a maximum current gain or beta of 75 and a maximum collector-emitter saturation voltage of 0.7 V. The breakdown voltage between collector and emitter is 6.5V. Its collector current is 400mA and the power dissipation is 600mW. Its voltage-gated capacitance is 750pF.The working principle of the BDW63B-S is relatively simple. When a voltage is applied to the base terminal, it allows a certain amount of current to be transferred from the emitter to the collector. Depending on the base-emitter voltage, this current can be increased or decreased. This increase or decrease in current is the gain achieved by the transistor.In summary, the BDW63B-S is a bipolar junction transistor, which is a type of semiconductor device used as a switch, amplifier and current source. It has a high switching speed and high gain, making it suitable for use in many applications such as switched-mode power supplies, AC-DC and DC-DC controllers, motor control applications and low-power linear applications. Its working principle is relatively simple and relies on the base-emitter voltage to increase or decrease the amount of current transferred from the emitter to the collector.

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