BDW64B-S Allicdata Electronics
Allicdata Part #:

BDW64B-S-ND

Manufacturer Part#:

BDW64B-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP DARL 80V 6A TO220
More Detail: Bipolar (BJT) Transistor PNP - Darlington 80V 6A ...
DataSheet: BDW64B-S datasheetBDW64B-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 4V @ 60mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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Bipolar Junction Transistors (BJTs) are three-terminal devices used in a variety of electronic devices, from computers to audio systems. BDW64B-S is a type of bipolar junction transistor which is designed for high-end applications. It is a single transistor and is thought to be the ideal choice for applications requiring high input impedance and low output impedance.

BDW64B-S features two base terminals connected to the emitter terminal and one collector terminal. The base terminal is the control element of the device and with the application of a small input current, the collector current can be increased substantially. This process is known as current gain or amplification.

BDW64B-S has several application fields. First, it can be used as an amplifier in audio systems. As mentioned before, it shows higher current gain than any other transistor, so it is ideal for amplifying signals in audio applications. Second, it can be used as a switch in different circuits. Because of its high switching speed and low on-resistance, it is used in RC circuits and digital circuits as well.

Working principles of BDW64B-S are relatively simple. By applying a small base current, a large collector current can be yielded. This occurs because the transistor is designed to operate in a specific biasing condition, namely forward current gain. When forward current gain biasing is used, the collector current becomes larger than the input base current. Thus, the transistor is able to effectively amplify the input base current.

BDW64B-S is designed to have superior electrical characteristics when compared to other transistors. It has high linearity, which means it can accurately reproduce the input signal. It also has low noise, providing clean and accurate output signals. Furthermore, its high efficiency also helps to reduce power consumption, making it an ideal choice for a variety of applications.

In conclusion, BDW64B-S is a single bipolar junction transistor designed for high-end applications. It features two base terminals connected to the emitter terminal, one collector terminal and operates in a forward current gain biasing condition. With its superior electrical characteristics, BDW64B-S are widely used in audio systems, digital circuits and other electronic applications.

The specific data is subject to PDF, and the above content is for reference

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