BDW63D-S Allicdata Electronics
Allicdata Part #:

BDW63D-S-ND

Manufacturer Part#:

BDW63D-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN DARL 120V 6A
More Detail: Bipolar (BJT) Transistor NPN - Darlington 120V 6A ...
DataSheet: BDW63D-S datasheetBDW63D-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 4V @ 60mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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Transistors are one of the most important components used in integrated circuits and modern electronic devices. Bipolar junction transistors (BJT) are a type of transistor where two p-n junctions are connected within a single device. BDW63D-S is a type of single BJT, which is often used in many applications. The following section will discuss the application field and working principle of the BDW63D-S.

Application Field for BDW63D-S

BDW63D-S is a versatile single BJT transistor that can be used in a wide range of applications. These transistors have a low saturation voltage and high gain, which makes them well suited for many low-power applications. They are commonly used in amplifier circuits such as preamplifiers and receivers, as well as oscillators and other frequency-controlled circuits. BDW63D-S transistors are also used in switching applications such as light dimmers, motor speed control and timer circuits. Other applications include linear regulators, battery chargers and logic gates.

Working Principle of BDW63D-S

BDW63D-S transistors are based on the classic BJT design. The two main components of a BJT are the emitter and the collector. The emitter is the central negatively charged region of the transistor, and the collector is the surrounding positively charged region. When a voltage is applied to the transistor, electrons are attracted from the emitter to the collector, creating an electrical current. This current then flows through the transistor, depending on the voltage applied.

The BDW63D-S is typically used in an amplifier circuit, in which it takes a weak signal and amplifies it. This is achieved by the voltage applied to the base-emitter junction, which creates a small amount of current. This current is then amplified by the transistor, and the output is greater than the input. This process is called "gain", and is one of the most important characteristics of transistors.

Conclusion

BDW63D-S transistors are an important type of single BJT transistor, and their application field is quite vast. Their low saturation voltage, high gain and ease of use make them ideal for numerous low-power applications. Understanding how a BDW63D-S works is fairly straightforward, as it is based upon the classic BJT design. Knowing the operation, application field and working principle of this type of transistor is essential for anyone looking to integrate transistors into their circuit designs.

The specific data is subject to PDF, and the above content is for reference

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