BDW63C-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	4V @ 60mA, 6A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 2A, 3V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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BDW63C-S Application Field and Working Principle

BDW63C-S is a type of transistor classified as bipolars, or BJT, or single junction transistors. It is used in a variety of electrical and electronic system applications, including audio amplifiers, small power supplies, switching applications, and low yes-no logic circuits.The BDW63C-S is a NPN bipolar transistor in a TO-220 package. This makes it a medium-power, surface-mount semiconductor device. It was designed for use in a wide range of applications, such as automotive electronics and consumer electronics.A bipolar transistor is an active device that is made up of three layers of differently doped semiconductor material. These three layers of semiconductor material act as a bridge between the current and voltage in an electrical operation. In the BDW63C-S, these layers are the emitter, collector, and base. To understand how the transistor E-B-C configuration works, they can be looked at as a switch. When current flows through the emitter and base, it causes a current to flow between the collector and emitter.The BDW63C-S operating voltage range is between 30 volts and 65 volts. The maximum collector current (Ic) is 1 Amp. The maximum power dissipation (Pd) is 1 watt. The maximum DC current gain is 65. The maximum storage temperature range is -55C to +150C. Its total gain bandwidth product is 25 MHz, and the maximum collector to emitter breakdown voltage is 80 volts.The BDW63C-S has an electrical rating of 1 watt and a voltage of 65 volts. It is designed for linear applications so it has a low noise and low distortion rating. It also has an optimized frequency response. It is widely used for linear applications, such as amplifiers and signal switching.One important characteristic of the BDW63C-S is that it has a low noise level which can be maintained as the voltage increases or decreases. This makes the transistor ideal for high fidelity audio applications. Another benefit of the BDW63C-S is it can stand up to large voltage swings, making it well-suited for applications that require a high output power and a high input signal.BDW63C-S transistors are manufactured under a quality control system to ensure consistent performance in volume production. As a result, users have confidence and assurance knowing that whichever BDW63C-S transistor they buy has been tested for consistent performance. Tests performed include repetitive pulse testing, high temperature thermal cycling, and also maintains high stability.The BDW63C-S also has a specification for operating temperature, which is our most important factor in device design. This specification is a number or letter assigned to a certain temperature, so that when the temperature goes outside of this range, it will affect the performance of the device.In conclusion, the BDW63C-S NPN bipolar transistor is a popular device due to its medium-power and excellent electrical ratings. It is well-suited for linear applications, its low noise and low distortion ratings make it ideal for audio applications, and its temperature specification maintains high stability and robust performance.

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