BDX53A-S Allicdata Electronics
Allicdata Part #:

BDX53A-S-ND

Manufacturer Part#:

BDX53A-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN DARL 60V 8A
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 8A ...
DataSheet: BDX53A-S datasheetBDX53A-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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BDX53A-S is a kind of transistor that belongs to the Single Bipolar (BJT) Transistor type. Its application scope and working principle is explained in this article.

1. Application Field

BDX53A-S transistors are suitable for medium power switching and amplifier applications. It is capable of handling high current of up to 10A and voltage of up to 150V. It is an effective device for applications such as audio amplifiers, high-voltage switching circuits, power switching circuits, voltage regulators, and power converters. It can also be used in audio amplifiers and drivers for Class D and Class AB digital amplifiers.

It is compatible with any type of transistor and can be used in any environment. It is available in a variety of packages and sizes, including TO-220, TO-3, and TO-247. This enables it to be used in a variety of applications, such as automotive, industrial, medical, and consumer electronics.

2. Working Principle

BDX53A-S transistors operate on the principle of band gap engineering. This process involves manipulating the energy bands in a semiconductor material in order to increase its electrical conductivity. By manipulating the energy bands, the doping of the material can be reduced and the electrodes are required to be able to cope with a high current, providing a higher voltage gain.

The current between the collector and emitter is controlled through the base. This process is also known as bipolar junction transistor (BJT) technology. When a positive voltage is applied to the base, electrons are drawn to it and this causes a decrease in current between the collector and emitter.

When the voltage is removed, the electrons return to their original position and the current between the collector and emitter increases. This process is repeated as the current is changed and the current is controlled by the voltage applied to the base. This action is known as the ‘sweep’.

3. Features and Benefits

BDX53A-S transistors provide a number of features and benefits to users. It has a high saturation voltage, low on-state voltage drop, and high forward-breakdown voltage. It also offers high-switching speed, low on-state resistance, and low turn-on time.

These features provide improved efficiency and performance for applications such as high voltage switching circuits and power converter. They also improve efficiency and reduce noise in Class D and Class AB amplifiers. This helps to ensure that audio signals remain clean and distortion-free.

In addition, this type of transistor has a long life and is capable of carrying and withstanding large currents. This ensures that it can be used in a variety of applications and in any environment.

4. Conclusion

BDX53A-S transistors are a type of transistor that is suitable for medium power switching and amplifier applications. Its high current and voltage handling capabilities, long life, high switching speeds, and low resistance make it an ideal choice for a wide range of applications. It is also capable of carrying and withstanding large currents, enabling it to be used in diverse environments.

The specific data is subject to PDF, and the above content is for reference

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