Allicdata Part #: | BDX54ATU-ND |
Manufacturer Part#: |
BDX54ATU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 60V 8A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 60V 8A ... |
DataSheet: | BDX54ATU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 12mA, 3A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 3A, 3V |
Power - Max: | 60W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Base Part Number: | BDX54 |
Description
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The BDX54ATU is a bipolar junction transistor with a single layer. It is one of the most common base to collector transistors. This transistor typically has a structure of a three-layer epitaxial silicon wafer. It features a lateral PN junction between two regions of semiconductor material, where a majority of carriers (holes or electrons) move from one region to the other region in response to an electric field. Its input is taken from its base which controls the current flowing through the transistor, in which electrons pass through the emitter and collector, then through the base.The BDX54ATU can have a very wide range of uses, such as amplifying small signals, switching devices, current sources, power amplifiers, etc. It can be used in a range of applications such as radio frequency transmission and amplification, audio frequency amplifiers, switching circuits, and logic circuits.In terms of its working principle, the BDX54ATU is a current-controlled device. The base region is where the input is taken from, and this current controls how much of the current can flow from the emitter to the collector. The collector current is equal to the base current multiplied by the DC current gain of the device. When a voltage is applied to the base of the transistor, there is an amplification of the signal from the base to the collector. This is because a small current at the base region is causing a larger current to flow from the collector.The BDX54ATU is an ideal semiconductor device for applications requiring a low voltage and current device with a wide dynamic range. It has a low power dissipation and a low noise level, which makes it efficient and reliable in its applications. Furthermore, it has no hysteresis and a fast switching time, which makes it suitable for digital applications. It can handle load currents of up to 1.5A and collector-emitter voltages of up to 60V. Its design is optimized for low threshold and high gain, making it an ideal choice for high frequency applications.In conclusion, the BDX54ATU is a popular single layer bipolar junction transistor. It is commonly used for a range of applications due to its low power dissipation, high current gain, and fast switching time. Its ability to handle high voltages and currents makes it one of the most reliable and efficient transistors on the market.
The specific data is subject to PDF, and the above content is for reference
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