BDX53C-S Allicdata Electronics
Allicdata Part #:

BDX53C-S-ND

Manufacturer Part#:

BDX53C-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS NPN DARL 100V 8A
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A ...
DataSheet: BDX53C-S datasheetBDX53C-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BDX53C-S is a type of transistor that falls under the category of "Bipolar (BJT) - Single". It is used in many different types of applications and is a versatile component due to its high current-gain bandwidth, its low noise, and its fast switching capabilities.This type of transistor is used in a variety of different applications across different industries. For example, they are commonly used in audio amplifiers, medical imaging equipment, automotive computers, and various other types of electronic equipment. They are also used to regulate the current flow in circuits and are often used in switching circuits for power supply applications. In addition, BDX53C-S transistors can be used for voltage and current amplification, thus making them useful for a wide range of design purposes.The BDX53C-S transistor is composed of three distinct regions: the emitter, the base, and the collector. The emitter is the region within the transistor that is responsible for creating current flow when an applied voltage is present. The base is the area within the transistor between the emitter and the collector. The collector is the output area of the transistor.In order to understand the working principle of the BDX53C-S transistor, we must understand how current flows in a semiconductor. The current flow in a semiconductor is determined by the concentration of charges. In the case of the BDX53C-S, the emitter is heavily doped with doping material, such as boron or phosphorous. This material creates a positive charge in the emitter. The base is less heavily doped than the emitter and it has a negative charge. Therefore, the base has electrons that repel the electrons of the emitter. This creates an electric field which is known as the base-collector electric field. When an input voltage is applied to the base, the electric field is reduced, allowing the electrons in the emitter to be attracted to the base. The electrons then pass through the base and into the collector, where they are collected. This results in a current flow from the emitter to the collector. The amount of current that is allowed to flow is determined by the gain of the transistor. The BDX53C-S is a bipolar transistor that is suitable for high-current applications due to its high current-gain bandwidth. This allows it to switch current very rapidly and with minimal noise. In addition, it is highly reliable, making it a popular choice for a variety of different applications.Overall, the BDX53C-S is a type of bipolar transistor that is used in a wide variety of applications. It is highly reliable and can be used to regulate current flow and to amplify voltages and currents. Thanks to its high current-gain bandwidth, it is suitable for high-current applications and can switch current quickly and with minimal noise.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BDX5" Included word is 24
Part Number Manufacturer Price Quantity Description
BDX54CTU ON Semicondu... -- 894 TRANS PNP DARL 100V 8A TO...
BDX53CG ON Semicondu... 0.63 $ 1000 TRANS NPN DARL 100V 8A TO...
BDX54CG ON Semicondu... -- 1000 TRANS PNP DARL 100V 8A TO...
BDX54BG ON Semicondu... -- 55 TRANS PNP DARL 80V 8A TO-...
BDX54C STMicroelect... -- 1000 TRANS PNP DARL 100V 8A TO...
BDX54B STMicroelect... -- 1000 TRANS PNP DARL 80V 8A TO-...
BDX53ATU ON Semicondu... 0.0 $ 1000 TRANS NPN DARL 60V 8A TO-...
BDX53BTU ON Semicondu... -- 1000 TRANS NPN DARL 80V 8A TO-...
BDX54BTU ON Semicondu... 0.0 $ 1000 TRANS PNP DARL 80V 8A TO-...
BDX53TU ON Semicondu... -- 1000 TRANS NPN DARL 45V 8A TO-...
BDX54ATU ON Semicondu... 0.0 $ 1000 TRANS PNP DARL 60V 8A TO-...
BDX54TU ON Semicondu... 0.0 $ 1000 TRANS PNP DARL 45V 8A TO-...
BDX53BFP STMicroelect... -- 1000 TRANS NPN DARL 80V 8A TO-...
BDX53C-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 100V 8ABip...
BDX53A-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 60V 8ABipo...
BDX53B-S Bourns Inc. 0.0 $ 1000 TRANS NPN DARL 80V 8ABipo...
BDX54C-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 100V 8ABip...
BDX54-S Bourns Inc. -- 1000 TRANS PNP DARL 45V 8ABipo...
BDX54A-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 60V 8ABipo...
BDX54B-S Bourns Inc. 0.0 $ 1000 TRANS PNP DARL 80V 8ABipo...
BDX53BG ON Semicondu... 0.64 $ 200 TRANS NPN DARL 80V 8A TO-...
BDX53B STMicroelect... -- 1000 TRANS NPN DARL 80V 8A TO-...
BDX53C STMicroelect... -- 1000 TRANS NPN DARL 100V 8A TO...
BDX53CTU ON Semicondu... -- 65 TRANS NPN DARL 100V 8A TO...
Latest Products
BC807-16W/MIX

GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...

BC807-16W/MIX Allicdata Electronics
CP547-MJ11015-CT

TRANS PNP DARL 30A 120V DIEBipolar (BJT)...

CP547-MJ11015-CT Allicdata Electronics
CP547-CEN1103-WS

TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...

CP547-CEN1103-WS Allicdata Electronics
TIP35C SL

TRANS GENERAL PURPOSE TO-218Bipolar (BJT...

TIP35C SL Allicdata Electronics
JAN2N3634

TRANS PNP 140V 1ABipolar (BJT) Transisto...

JAN2N3634 Allicdata Electronics
BULB7216-1

TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...

BULB7216-1 Allicdata Electronics