BDX53B Discrete Semiconductor Products |
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Allicdata Part #: | 497-7182-5-ND |
Manufacturer Part#: |
BDX53B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN DARL 80V 8A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 8A ... |
DataSheet: | BDX53B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 12mA, 3A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 3A, 3V |
Power - Max: | 60W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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BDX53B Application Field and Working Principle
BDX53B is a single-type bipolar junction transistor (BJT) that is widely used in a variety of electronic circuits. Its technical features and applications are ideal for medium-power VHF/UHF applications, such as power driver and switching circuits. It has high breakdown voltage, high gain and low noise, making it suitable for use in automotive and consumer electronics, telecom, consumer products, and other industrial applications.
Features of BDX53B
BDX53B is an NPN transistor with a high collector breakdown voltage of 300 volts and has a gain of 1.8A. A maximum current of 15A can be drawn, and at an operating temperature of 25 degrees Celsius, it can achieve a maximum power of 40W. For a given operating condition, the forward voltage drop is typically 0.45V. The reverse current leakage is typical 10uA. It is recommended to use BDX53B with a heat sink as it is relatively temperature sensitive.
Applications of BDX53B
BDX53B is well suited for medium-power VHF/UHF applications and can be used as switches, amplifiers, and drivers for circuits with ratings up to 40W. Its features make it ideal for use in radio frequency amplifiers, portable radio receivers, and broadcasting equipment. In addition to these, it is also used in consumer electronics, automotive, consumer products, telecom, and other industrial applications. Furthermore, it is also widely used in switching and linear power amplifiers.
Working Principle of BDX53B
The working principle of BDX53B is similar to that of any other NPN transistor. When a small current is applied to its base, it controls a larger current to the collector. This larger current, in turn, is greater or equal to the gain of the transistor. The collector current is thus controlled by the amount of current given to the base. The BDX53B can thus act as a powerful switch to control high currents, while also providing a low-noise signal.
In order to function properly, the BDX53B transistor should be properly biased. This means that the base must have enough voltage to keep the transistor in the active region, where it can deliver the desired output. This bias voltage must be greater than the VCEsat level, which is typically 0.5V.
In Conclusion
BDX53B is a single-type bipolar junction transistor (BJT) that offers a wide range of features and applications. Its high breakdown voltage, low noise, high gain, and low forward voltage drop make it suitable for use in medium-power VHF/UHF applications, such as radio frequency amplifiers, portable radio receivers, and broadcasting equipment. It is also used in automotive and consumer electronics, consumer products, telecom, and other industrial applications. The working principle of BDX53B is similar to that of any other NPN transistor and it should be properly biased in order to function properly.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BDX54CTU | ON Semicondu... | -- | 894 | TRANS PNP DARL 100V 8A TO... |
BDX53CG | ON Semicondu... | 0.63 $ | 1000 | TRANS NPN DARL 100V 8A TO... |
BDX54CG | ON Semicondu... | -- | 1000 | TRANS PNP DARL 100V 8A TO... |
BDX54BG | ON Semicondu... | -- | 55 | TRANS PNP DARL 80V 8A TO-... |
BDX54C | STMicroelect... | -- | 1000 | TRANS PNP DARL 100V 8A TO... |
BDX54B | STMicroelect... | -- | 1000 | TRANS PNP DARL 80V 8A TO-... |
BDX53ATU | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 60V 8A TO-... |
BDX53BTU | ON Semicondu... | -- | 1000 | TRANS NPN DARL 80V 8A TO-... |
BDX54BTU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 80V 8A TO-... |
BDX53TU | ON Semicondu... | -- | 1000 | TRANS NPN DARL 45V 8A TO-... |
BDX54ATU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 60V 8A TO-... |
BDX54TU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 45V 8A TO-... |
BDX53BFP | STMicroelect... | -- | 1000 | TRANS NPN DARL 80V 8A TO-... |
BDX53C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 100V 8ABip... |
BDX53A-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 60V 8ABipo... |
BDX53B-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 80V 8ABipo... |
BDX54C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 100V 8ABip... |
BDX54-S | Bourns Inc. | -- | 1000 | TRANS PNP DARL 45V 8ABipo... |
BDX54A-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 60V 8ABipo... |
BDX54B-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 80V 8ABipo... |
BDX53BG | ON Semicondu... | 0.64 $ | 200 | TRANS NPN DARL 80V 8A TO-... |
BDX53B | STMicroelect... | -- | 1000 | TRANS NPN DARL 80V 8A TO-... |
BDX53C | STMicroelect... | -- | 1000 | TRANS NPN DARL 100V 8A TO... |
BDX53CTU | ON Semicondu... | -- | 65 | TRANS NPN DARL 100V 8A TO... |
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