BDX54-S Allicdata Electronics
Allicdata Part #:

BDX54-S-ND

Manufacturer Part#:

BDX54-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP DARL 45V 8A
More Detail: Bipolar (BJT) Transistor PNP - Darlington 45V 8A ...
DataSheet: BDX54-S datasheetBDX54-S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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The BDX54-S is a single, bipolar junction transistor (BJT) from NXP Semiconductors. The BDX54-S is a NPN transistor with a maximum Collector Dissipation of 2.0 Watts and a maximum Collector–Emitter Voltage (VCE) of 60 V. It has a very low capacitance between Base and Collector and is specifically designed for high speed switching applications.

The BDX54-S is a general purpose NPN device with a switching time of 1.3 µs (maximum) and a Collector–Emitter saturation voltage of 0.5 V (maximum) at a Collector Current IC (max) of 0.5 A. The BDX54-S comes in a standard TO-220 Package, mounted on a standard Molds mounting plate or a Socket Mount.

The BDX54-S has a very low turn–on delay time and low Collector–Base saturation voltage. It also features a low input capacitance, making it suitable for high speed switching applications such as logic gates, timers and relays. It is also suitable for wide range of analog applications such as DC amplifiers, voltage and current regulators, small signal amplifiers, oscillators and switching applications.

The BDX54-S uses a high frequency silicon planar process, in which the electrical and physical properties of the different layers are carefully controlled. This process enables high current density, high frequency operation and low turn–on delays. This makes the BDX54-S an ideal choice for high speed, low on–state power dissipation and low voltage applications.

The working principle behind the BDX54-S is simple. When a voltage is applied to the Base, a current flows through the Base–Emitter junction, which in turn causes a current to flow through the Collector–Emitter junction. This current is determined by the ratio of the “Transistor Beta” or “Current Gain” and is regulated by the Base current. The gain is determined by the design and fabrication of the transistor. The Base–Emitter junction acts as an isolator that enables the Collector–Emitter junction to carry current in one direction only. When the voltage on the Base–Emitter junction is low, no current flows and the Collector–Emitter junction is turned off.

In summary, the BDX54-S is a general purpose, single bipolar junction transistor that is designed for high speed switching applications. It has a low input capacitance, fast switching times, low turn–on delay times and low VCE (Sat) values. Its simple design and fabrication process enables it to be suitable for a wide range of analog and digital applications.

The specific data is subject to PDF, and the above content is for reference

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