Allicdata Part #: | BF2030RE6814HTSA1TR-ND |
Manufacturer Part#: |
BF2030RE6814HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 8V 40MA SOT-143R |
More Detail: | RF Mosfet N-Channel 5V 10mA 800MHz 23dB PG-SOT143... |
DataSheet: | BF2030RE6814HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel |
Frequency: | 800MHz |
Gain: | 23dB |
Voltage - Test: | 5V |
Current Rating: | 40mA |
Noise Figure: | 1.5dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 8V |
Package / Case: | SOT-143R |
Supplier Device Package: | PG-SOT143R-4 |
Base Part Number: | BF2030 |
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The BF2030RE6814HTSA1 is a three-terminal external gate n-channel, field-effect transistor (FET), which is designed specifically for radio frequency (RF) applications. It offers a range of features designed to optimize protection, switching speed, on-resistance, current handling, and other characteristics in such applications. The BF2030RE6814HTSA1 is part of a family of FETs designed for RF use, and is available in a range of package options and current levels to meet varying requirements.
The BF2030RE6814HTSA1 is designed to operate from a single +24 V supply, and is designed and standardized for industrial packaging. It is available in a TO-220 package, with a maximum operating temperature range of -40°C to +85°C. The features of this FET make it suitable for a range of RF applications, including switching, gain control, and gain control.
The working principle of the BF2030RE6814HTSA1 is based on the principle of a three-terminal field-effect transistor. When voltage is applied to the gate, it creates a field that modulates the current flowing through the device. This in turn changes the resistance between source and drain terminals, allowing current to be controlled and regulated in a predictable manner. The BF2030RE6814HTSA1 is designed to be a type of FET called a “common-gate” FET, meaning it is designed to operate with a low input impedance at the gate.
The BF2030RE6814HTSA1 is designed to provide greater protection than other FETs, as it is able to handle greater output currents. It also has a lower on-resistance than other FETs, allowing for more efficient operation, as well as faster switching speeds. The device is further designed for radio-frequency operation, with features that enable it to handle high-frequency signals up to 4 GHz. In addition, it is able to withstand a wide range of operating temperatures, making it suitable for a range of industrial and automotive applications.
The BF2030RE6814HTSA1 is designed for RF applications, and offers several benefits over traditional FETs. It is designed to provide an efficient and reliable way to control current, as well as a faster switching speed. In addition, it provides greater protection and can handle higher frequencies than other devices, allowing for its use in a range of applications.
The specific data is subject to PDF, and the above content is for reference
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