BF2040E6814HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BF2040E6814HTSA1TR-ND |
Manufacturer Part#: |
BF2040E6814HTSA1 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 8V 40MA SOT-143 |
More Detail: | RF Mosfet N-Channel 5V 15mA 800MHz 23dB PG-SOT143... |
DataSheet: | BF2040E6814HTSA1 Datasheet/PDF |
Quantity: | 15000 |
3000 +: | $ 0.06305 |
6000 +: | $ 0.05955 |
15000 +: | $ 0.05429 |
30000 +: | $ 0.05079 |
75000 +: | $ 0.04554 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | N-Channel |
Frequency: | 800MHz |
Gain: | 23dB |
Voltage - Test: | 5V |
Current Rating: | 40mA |
Noise Figure: | 1.6dB |
Current - Test: | 15mA |
Power - Output: | -- |
Voltage - Rated: | 8V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | PG-SOT143-4 |
Base Part Number: | BF2040 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BF2040E6814HTSA1 is an advanced semiconductor device that is based on complementary metal-oxide-semiconductor (CMOS) fabrication process. It is designed for RF (radio frequency) applications in industry and consumer markets. It is an integrated low-loss high-performance semiconductor device with superior ESD (electrostatic discharge) protection. This device consists of a single stage, bi-directional, high-voltage MOSFET (metal-oxide-semiconductor field-effect transistor) on a single chip.
The main principle of operation for BF2040E6814HTSA1 is based on the MOSFET technology. A MOSFET is an electronic device that can be used as a switch, amplifier, or as a component of an integrated circuit. It works by allowing a small electric current to flow between two terminals on its gate, producing a voltage drop across the body of the MOSFET. This voltage drop is then used to control the operation of the device. By adjusting the gate voltage, the MOSFET can be used as either a switch or an amplifier.
The main advantages of using a MOSFET are its low power consumption, high input impedance and fast switching speed. The BF2040E6814HTSA1 device uses a combination of these advantages to provide a high performance RF solution. It has a low power consumption compared to other devices used in RF applications and is also highly stable, allowing it to be used in high frequency applications. Additionally, it offers superior ESD protection, which is especially important in high voltage applications.
The main application of BF2040E6814HTSA1 is in RF applications. These include wireless networks, cell phone transmitting and receiving components, and high-frequency switching power supply control. It is used in these applications because it offers superior ESD protection, and its low power consumption makes it a cost effective solution. Furthermore, its high frequency performance makes it ideal for high frequency applications such as cell phones.
In addition to its use in RF applications, BF2040E6814HTSA1 is also used in other applications. It can be used as a voltage regulator for voltage across a circuit, providing precise control at high frequencies. It is also used as an input device for a variety of devices, such as digital cameras and other media players. Furthermore, it can be used as an output device for audio and video systems as well.
The BF2040E6814HTSA1 is one of the most widely used devices in today’s RF applications. Its low power consumption and high input impedance makes it a cost effective solution for a variety of applications. Its combination of high performance and ESD protection makes it an ideal choice for a wide range of uses. As a result, it is the preferred choice for RF engineers looking for a reliable, efficient and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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