BF2040RE6814HTSA1

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BF2040RE6814HTSA1 is a high transconductance power Field Effect Transistor (FET) from RF Micro Devices (RFMD), designed for a variety of RF and cellular telecommunications applications. The device comes in an expandable RoHS compliant, high temperature plastic package with gold plated leads. The device is designed and tested to provide a high level of performance, rugged design and enhanced product reliability in a wide range of operating conditions.

A FET is a special type of transistor which uses an electric field to control the flow of electrons in a current. FETs are commonly used in digital electronics and radio frequency circuits, as they provide high levels of power efficiency and amplification with low noise levels. As the FET’s active region is made of semiconductor material, it can be easily manipulated to change the current or voltage applied to the FET’s gate, allowing for dynamic control of the FET’s operation. FETs are commonly used for switching, linear control and amplification. The BF2040RE6814HTSA1 FET is designed for RF applications and provides high power gain, allowing an efficient operation. The device offers high output power, low noise levels and high linearity, making it an ideal device for a wide range of RF and cellular communications applications.

The BF2040RE6814HTSA1 FET is specially designed for use in digital radio and wireless applications. The device is capable of withstanding high temperature, high voltage, and high frequency operating conditions while providing excellent RF performance. The FET is designed to operate with a wide range of typical bias voltages and is capable of providing high power gain in both above and below threshold operating conditions. The FET also offers low threshold voltage and well matched drain-source capacitance, which provides excellent RF performance even with charge pump circuits.

The device is also designed with a wide bandwidth, which allows for enhanced dynamic range and improved signal-to-noise performance. The wideband FET also offers enhanced output power and offers a low noise figure for better receiver sensitivity. The FET features an internal inter-stage matching network, which further enhances the power gain and linearity of the device. The FET also offers high RF isolation and low signal loss, making it an ideal choice for high power applications.

The BF2040RE6814HTSA1 FET provides enhanced performance and reliability in a wide range of radio frequency and cellular communication applications. The device is designed to operate well in a variety of operating conditions, providing optimal performance and a long working life. The device’s wideband design offers improved dynamic range and extended power output, making it suitable for use in a variety of RF applications.

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