BF861B,215

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BF861B,215 is a type of field effect transistor (FET), specifically a metal–oxide–semiconductor FET (MOSFET), used for radio frequency (RF) applications. As a FET, the device consists of a source, gate, and drain made from highly conductive doped silicon, structured so that the flow of current can be controlled by varying the voltage on the gate. This allows it to act as an amplifier or switch, depending on the circuit design. The BF861B,215 is an example of a low-noise MOSFET, with low capacitance, intended for RF applications.

MOSFETs, like all FETs, are built on the same principle as traditional transistors. Instead of using a current, or base, to control the flow of electrons between the collector and emitter as in a bipolar transistor, MOSFETs use a voltage on the gate to control the current between the source and drain. Unlike bipolar transistors, MOSFETs can have a much higher input impedance, meaning that it requires less current at the gate to control the current between the source and drain. This makes them more efficient than bipolar transistors, and more suitable for RF applications.

The BF861B,215 is a particularly low-noise MOSFET, meaning that it has a higher gain and lower frequency noise than many similar FETs. This makes it ideal for RF applications, where lower noise and higher gain are essential. It is also designed for operation with high-power VHF signals, and has a high maximum drain-source voltage of 75V. The device is designed to operate at a drain-source voltage of between 2.8V and 30V, with a drain current up to 200mA. It also has a maximum input capacitance of 10.5pF, which is relatively low compared to other types of FETs. This lower capacitance results in lower frequency noise, which is essential in RF applications.

The BF861B,215 is an N-channel type of MOSFET, meaning that the current between the source and drain flows through an N-type semiconductor material. This type of material allows for fast switching, making the device suitable for use as an amplifier or switch in RF circuits. The device is also commonly used as a mixer in RF circuits, where the current flowing through it can be modulated to control the signal at the output.

In summary, the BF861B,215 is a low-noise MOSFET suitable for RF applications. It is an N-channel type of FET, which allows for fast switching and can be used as an amplifier or switch in RF circuits. It also has a maximum input capacitance of 10.5pF, which is relatively low compared to other types of FETs, making it ideal for use in RF applications where low frequency noise is essential.

The specific data is subject to PDF, and the above content is for reference