BF861C,215 Allicdata Electronics
Allicdata Part #:

568-6169-2-ND

Manufacturer Part#:

BF861C,215

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: JFET N-CH 25V 25MA SOT23
More Detail: RF Mosfet N-Channel JFET TO-236AB (SOT23)
DataSheet: BF861C,215 datasheetBF861C,215 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.21673
Stock 3000Can Ship Immediately
$ 0.23
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: N-Channel JFET
Frequency: --
Gain: --
Current Rating: 25mA
Noise Figure: --
Power - Output: --
Voltage - Rated: 25V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BF861
Description

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The BF861C,215 is a type of transistor that is specialised for use in radio frequency (RF) applications. It belongs to a family of transistors known as field-effect transistors (FETs), of which metal-oxide-semiconductor field-effect transistors (MOSFETs) are a specific subtype. The BF861C,215 is a common member of this family and is a popular choice for many RF applications.

The primary function of a transistor is to act as a switch or amplifier by controlling the current that flows between two points in a circuit. In order to do so, the transistor must be correctly biased so that it can conduct or block current depending on the input signals. FETs are specialised transistors designed to operate at higher frequencies than those of the conventional transistor.

The BF861C,215 is used in high-frequency applications such as radio transmitters and receivers. It is also commonly used in amplifiers, mixers, and other devices that require a wide tuning range in order to operate effectively. In addition, as the transistor is optimised for RF applications, it can provide a greater gain than that of conventional transistors, making it suitable for high-power operations.

The working principle behind the BF861C,215 is simple. The transistor consists of two main elements: the source and the drain. The source supplies current to the drain, which then flows through a channel between the two. The voltage applied to the gate of the transistor controls the width of the conducting channel between the source and the drain. By controlling the width of the channel, the amount of current flowing through it can also be controlled. This makes the transistor ideal for use in high-frequency switching and amplification.

In conclusion, the BF861C,215 is an optimised FET designed specifically for radio frequency applications. It is able to operate efficiently in a wide range of frequencies, making it ideal for use in many types of radio transmitters and receivers. Its simple working principle makes it easy to operate, while its optimised design allows it to provide greater gain than conventional transistors.

The specific data is subject to PDF, and the above content is for reference

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