Allicdata Part #: | 568-1968-2-ND |
Manufacturer Part#: |
BF862,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET N-CH 20V 25MA SOT23 |
More Detail: | RF Mosfet N-Channel JFET TO-236AB (SOT23) |
DataSheet: | BF862,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 25mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 20V |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BF862 |
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The BF862,215 is a N-channel field effect transistor (FET) and is a part of the family of high frequency silicon bipolar transistors. It is also referred to as a “Mosfet”, and this is derived from the term “Metal-oxide Semiconductor Field-effect Transistor”. The number BF862 refers to the particular chip and the 215 is the internal code number of the manufacturer.
This field effect transistor represents one type of device used to provide amplification of both signal and power. The device is designed specifically for high frequency operation and is a bidirectional transistor. Its applications include low noise amplifiers, RF switches, and RF antenna switches.
The major advantage of this device is its ability to operate at high frequencies with low power consumption. It can be used in many different types of applications and is favored for its high resistance to noise, its low on resistance, and reliability over extended life. This makes it an ideal choice for high frequency power supply applications.
The circuit operation of the FET is based on the gate structure. The gate of the FET acts as a gate to control the current flow between the gate and the source. The gate acts as a barrier between the two terminals, which allows the device to be used in unidirectional or bidirectional circuits. The gate is also used to control the voltage applied to the device.
The FET is composed of two elements, the actual transistor and a gate oxide layer. This oxide layer helps protect the device from high voltage, as well as providing protection against current leakage. The gate oxide layer acts as a barrier to prevent electrons from flowing through the gate and is responsible for maintaining the low gate voltage needed for proper operation.
The working principle of the FET is based on the fact that when a certain voltage is applied to the gate, a current flows through the device. This current is then used to generate power. Once the power reaches a certain level, the current starts to flow in the opposite direction and the FET can be used to provide amplification.
The FET can be used for a wide variety of applications, including radio frequency (RF), microwave, communications, and other power systems. It can be used as an oscillator, a modulator, or an amplifier. It is also used in many high power applications, including power amplifiers, RF antenna systems and communications systems. It can also be used to control the current and voltage of large currents.
In summary, the BF862,215 is a popular field effect transistor and is used in many high frequency and power systems applications. It is used to provide amplification and low power consumption. It is also used to control current and voltage. Its applications include low noise amplifiers, RF switches, and RF antenna switches.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BF861B,215 | NXP USA Inc | 0.21 $ | 6000 | JFET N-CH 25V 15MA SOT23R... |
BF861B,235 | NXP USA Inc | 0.15 $ | 1000 | JFET N-CH 25V 15MA SOT23R... |
BF861C,215 | NXP USA Inc | 0.23 $ | 3000 | JFET N-CH 25V 25MA SOT23R... |
BF862,215 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 20V 25MA SOT23R... |
BF862,235 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 20V 25MA SOT23R... |
BF861A,215 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 25V 6.5MA SOT23... |
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