Allicdata Part #: | BFR181WE6327INTR-ND |
Manufacturer Part#: |
BFR 181W E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR NPN RF 12V SOT-323 |
More Detail: | RF Transistor NPN 12V 20mA 8GHz 175mW Surface Moun... |
DataSheet: | BFR 181W E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
Gain: | 19dB |
Power - Max: | 175mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 8V |
Current - Collector (Ic) (Max): | 20mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BFR181 |
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BFR181W E6327 is a RF bipolar junction transistor (BJT) made by NXP components. It is a NPN silicon monolithic transistor that is designed for use in wireless applications. It has a frequency range of 0.7 GHz-3.0GHz, a gain of 15 dB, and a power output of 172mW. It is mainly used in RF amplifiers, mixers, oscillators and switches.
A bipolar junction transistor (BJT) is a three-terminal electronic device consisting of two p-n junctions where the majority charge carriers are electrons or holes. They are commonly used for switching, signal amplification, voltage regulation, and signal mixing. BJTs exist as either NPN or PNP transistors, depending on the arrangement of their p-n junctions. The BFR181W E6327 is an NPN transistor, meaning that the middle layer of silicon between the two p-doped layers is n-doped, and electrons are the majority carriers.
The working principle behind the BFR181W E6327 is voltage control. By applying a voltage to the base or control terminal, current is allowed to flow through the collector and emitter terminals. This current is then used to amplify or switch signals. As the voltage increases and decreases, the amount of current that is allowed to flow through the collector and emitter terminals changes accordingly. This means that the BFR181W E6327 can be used to amplify or swith signals over a wide range of frequencies.
The BFR181W E6327 is an excellent device for a variety of wireless applications such as cell phones, laptops, PDA’s, routers and many more. Its high gain and frequency range make it ideal for amplifying and switching RF signals. It is especially suited for use in RF amplification applications due to its low noise characteristics. The BFR181W E6327 can also be used in applications such as mixers, oscillators and switching circuits, making it a versatile device for many different applications.
In conclusion, the BFR181W E6327 is an excellent RF bipolar junction transistor that is designed for wireless applications. It has a frequency range of 0.7 GHz-3.0GHZ and a gain of 15 dB. It is mainly used in RF amplifiers, mixers, oscillators, and switches. The working principle behind the device is voltage control, which is used to amplify or switch signals over a wide range of frequencies. The BFR181W E6327 is ideal for use in a variety of wireless applications such as cell phones, laptops, PDA’s, routers and many more.
The specific data is subject to PDF, and the above content is for reference
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