BFR92A,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-1650-1-ND |
Manufacturer Part#: |
BFR92A,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 25MA 15V 5GHZ SOT23 |
More Detail: | RF Transistor NPN 15V 25mA 5GHz 300mW Surface Moun... |
DataSheet: | BFR92A,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 5GHz |
Noise Figure (dB Typ @ f): | 2.1dB ~ 3dB @ 1GHz ~ 2GHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 65 @ 15mA, 10V |
Current - Collector (Ic) (Max): | 25mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BFR92 |
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The BFR92A,215 is a high-performance NPN silicon planar epitaxial transistor designed for amplification applications operating in the frequency range from DC to 100 MHz. It offers exceptionally high gain over a wide range of frequencies and has a very low noise level making it particularly suitable for hearing instrument and medical applications. Generally speaking, the device can be used for the amplification of RF signals up to a frequency of 100 MHz.
The BFR92A, 215 device consists of two main elements which are the base and the collector regions of the transistor and it is manufactured using the latest semiconductor fabrication techniques to ensure superior quality and reliability. The device is housed in a mini-SOT23 surface mount package which is ideal for use in space limited application designs such as hearing aids, medical imaging devices and cellular communication systems.
The transistor has an exceptionally high gain which is a result of its symmetrical layout. This design allows it to produce superb gain even at low frequencies compared to other transistors of its type with the same level of voltage applied. As well as offering excellent gain, the BFR92A,215 also has a very low noise level making it particularly suitable for applications where low levels of background noise are essential such as hearing instruments and medical imaging devices.
The BFR92A,215 is also designed to be highly efficient and has a remarkably low power consumption which makes it particularly suitable for portable battery operated applications. The high efficiency of the device is due to its high voltage gain and the low level of current it requires to function properly.
In terms of operation, the BFR92A,215 functions in two different modes. First is the active mode where the device amplifies the input signal. In this mode the inputs are connected to the base-emitter junction and the collector will be connected to an output terminal. Second is the saturation mode where the device is operated to reduce the penetration of receiving signals. In this mode a higher voltage is applied to the base and at the same time the collector is grounded.
The BFR92A, 215 is an ideal device for a wide range of applications due to its excellent high frequency performance, low power consumption, small package size, and very low noise level. It is suited to hearing instruments, medical imaging devices, cellular communication systems, and professional and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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