Allicdata Part #: | BFR520,235-ND |
Manufacturer Part#: |
BFR520,235 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 15V 70MA 9GHZ SOT23 |
More Detail: | RF Transistor NPN 15V 70mA 9GHz 300mW Surface Moun... |
DataSheet: | BFR520,235 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.1dB ~ 2.1dB @ 900MHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 20mA, 6V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BFR520 |
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The BFR520,235 is a high voltage, high current, dual NPN transistor combined in a single package that is suitable for use in radio frequency (RF) applications. The BFR520,235 is a specific type of radio frequency transistor known as a bipolar junction transistor (BJT). It is a type of device commonly used for power amplification in a wide range of applications, including radio equipment, televisions, high-fidelity audio systems, telephones, and electronic musical instruments.
The device is a high-voltage and high-current device that is designed to withstand high operating voltages and currents. The device is specifically designed for applications that require a high level of reliability, such as those found in high voltage electrical grids or military installations. The device can also be used in other applications such as weather radar systems, cell phones, satellites, and medical imaging systems.
The BFR520,235 features a low-noise operation along with a wide operating temperature range. The device is able to handle high power ratings due to its high collector-base breakdown voltage of 500 volts DC. It also features a low capacitance between the collector and base, reducing the effects of parasitic capacitance on the circuit’s signal transfer.
The BFR520,235 has a wide range of applications due to its high current capacity and high breakdown voltage. It can be used to drive high power applications such as power amplifiers in radio equipment or high voltage transducers in battery-operated devices. The device can also be used in RF applications such as RF switches, RF signal relays, RF signal splitters, and RF mixers.
The transistor also has numerous applications in the telecommunications and wireless industry. It can be used in wireless modems, wireless networks, and mobile base stations. The device can also be used to control high voltage power supplies, enabling efficient and reliable control of large loads in industrial systems.
The BFR520,235 is also well-suited for use in signal mixing and modulation applications. The device can be used to combine two or more signals and apply them to a single output, allowing for the efficient transfer of high-speed signals. The device is also suitable for driving high current loads such as relays and solenoids.
The BFR520,235 is a high-performance bipolar junction transistor (BJT) that is suitable for use in a wide range of radio frequency (RF) applications. It is designed to handle high voltages and currents and can be used in applications such as high power amplifiers and RF switches. The device’s low-noise operation and wide operating temperature range make it well-suited for numerous telecommunications and wireless applications. It is also suitable for signal mixing and modulation applications and can be used to drive high current loads.
The specific data is subject to PDF, and the above content is for reference
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