BFR92PE6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BFR92PE6327HTSA1TR-ND |
Manufacturer Part#: |
BFR92PE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR RF NPN 15V SOT-23 |
More Detail: | RF Transistor NPN 15V 45mA 5GHz 280mW Surface Moun... |
DataSheet: | BFR92PE6327HTSA1 Datasheet/PDF |
Quantity: | 42000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 5GHz |
Noise Figure (dB Typ @ f): | 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz |
Gain: | 10.5dB ~ 16dB |
Power - Max: | 280mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 15mA, 8V |
Current - Collector (Ic) (Max): | 45mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BFR92 |
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?The BFR92PE6327HTSA1 is a single, monolithic amplifier manufactured with advanced NPN bipolar technology that is primarily designed for use as a high frequency mixer or modulator. Additionally, it can be used in switching applications, amplifiers and pre-drivers for switching amplifiers, providing a single solution for design patterns that require both high gain bandwidth, low noise and good reverse voltage protection characteristics.
The BFR92PE6327HTSA1 features a high frequency response and can be used up to 6GHz with a base-to-emitter voltage of 5 volts. It offers the user superior performance in terms of wide bandwidth, low noise, and excellent reverse voltage protection characteristics. The device is particularly useful for high frequency applications such as frequency control, direct modulation/demodulation, RF switching, as well as for switching amplifiers and pre-drivers for switching amplifiers.
BFR92PE6327HTSA1 application field and working principle include its use in modulating and demodulating signals from 6GHz and up, depending on its base-to-emitter voltage and reverse voltage protection characteristics. It can be used to create high-frequency mixers, modulators and other switching applications. Since the device supports wide bandwidth and low noise characteristics, it is an ideal solution for applications where precise frequency control is desired.
BFR92PE6327HTSA1 is designed primarily for use in radio frequency (RF) switching and amplifying. The device features two terminals, the base and the emitter, that form the basis of the device and are connected to the transistor’s collector and base, respectively. The collector is the signal input, while the emitter is the output.
The base-to-emitter voltage of the device determines its frequency range, while the reverse voltage protection ensures the device is protected from hazardous or high overloads. When the device is activated, current flows from the base to the emitter, and the transistor amplifies the signal from the collector before sending it out from the emitter.
In terms of its physical properties, the BFR92PE6327HTSA1 is a small, surface-mounted device that has a small footprint, making it suitable for use in smaller applications. It is also tolerant to high temperature and low capacitance levels, which helps make it durable and reliable in RF applications.
Overall, the BFR92PE6327HTSA1 is an effective and versatile device that is suitable for use in both RF switching and amplifying circuits. It features a high frequency range, low noise, and excellent reverse voltage protection characteristics, making it an ideal choice for high-frequency applications such as frequency control, modulation/demodulation, and RF switching. It also has a small physical footprint, making it suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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