BFR 183W E6327

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain:	18.5dB
Power - Max:	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 15mA, 8V
Current - Collector (Ic) (Max):	65mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	PG-SOT323-3
Base Part Number:	BFR183

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Introduction

The BFR 183W E6327 (E-600 Series) has become one of the most ubiquitous transistors used in the Radio Frequency (RF) sector. The transistor is manufactured by the company NXP Semiconductors, and is manufactured with the aim of providing efficient power amplification and frequency control in dense, high-performance RF systems. This article will look at the applications and working principles of the BFR 183W E6327, as well as the advantages and disadvantages of this transistor for RF applciations.

Applications

The BFR 183W E6327 is a versatile and reliable device that is suitable for many different types of RF applications. The transistor is regularly used in the production of consumer electronics, such as wireless headphones, mobile phones and wireless speakers. The BFR 183W E6327 is also ideal for use in broadband radio frequency amplifiers and receivers, and can be used to provide reliable and efficient frequency control in a wide range of circumstances.

Working Principle

The BFR 183W E6327 uses a bipolar junction transistor (BJT) as its operating device. The transistor is designed to provide efficient and effective control of electrical signals in a wide variety of situations. The transistor acts as a current amplifier, allowing the user to vary voltage and current signals with the aid of an external power supply. In addition, the transistor features a built-in emitter resistance which avoids instability and improves the overall efficiency of the device.

Advantages

The BFR 183W E6327 offers a number of advantages over other types of transistors. Firstly, the transistor is extremely reliable and offers a very low noise figure, meaning that it can be used in a range of applications without compromising performance. Secondly, the transistor is temperature stable, and is capable of operating over a wide range of temperatures. Additionally, the transistor is capable of frequency control over a wide range and can be used for a variety of different frequency control applications.

Disadvantages

The BFR 183W E6327 is not without its drawbacks. Firstly, the transistor suffers from a moderate degree of voltage roll-off, meaning that it may not be suitable for some applications which require high levels of power efficiency. In addition, the transistor is only suitable for use in Class A and AB amplifiers, meaning that it may not be suitable for some applications which require different amplifier classes.

Conclusion

The BFR 183W E6327 is a robust and reliable transistor that is suitable for use in a wide range of RF applications. The transistor is capable of providing efficient frequency control in a range of situations and offers a low noise figure and temperature stability. Although the transistor does suffer from a moderate degree of voltage roll-off and is only suitable for Class A and AB amplifiers, the BFR 183W E6327 is still a formidable transistor offering both reliability and efficiency for many applications.

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